Epitaxy of nanocrystalline silicon carbide on Si(111) at room temperature

Journal of the American Chemical Society

Volumn 134, Issue 42, 2012, Pages 17400-17403

  Verucchi, Roberto ^a   Aversa, Lucrezia ^a   Nardi, Marco V ^a,f   Taioli, Simone ^b,c,e   A Beccara, Silvio ^b,e   Alfè, Dario ^d   Nasi, Lucia ^a   Rossi, Francesca ^a   Salviati, Giancarlo ^a   Iannotta, Salvatore ^a  

^a IMEM CNR   (Italy)

^b UNIVERSITY OF TRENTO   (Italy)

^c UNIVERSITY OF BOLOGNA   (Italy)

^d UNIVERSITY COLLEGE LONDON   (United Kingdom)

^e INFN SEZIONE DI PERUGIA   (Italy)

^f HUMBOLDT UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BUCKMINSTERFULLERENES; CHEMICAL PROCESS; HIGH TEMPERATURE; HIGH-TEMPERATURE SYNTHESIS; ROOM TEMPERATURE; SI (1 1 1); SUPERSONIC BEAMS; THERMODYNAMIC EQUILIBRIA;

EPITAXIAL GROWTH; MECHANICAL PROPERTIES;

SILICON CARBIDE;

SILICON CARBIDE;

ARTICLE; CHEMICAL REACTION; ELECTRON DIFFRACTION; PHYSICAL CHEMISTRY; ROOM TEMPERATURE; SYNTHESIS;

CARBON COMPOUNDS, INORGANIC; NANOPARTICLES; QUANTUM THEORY; SILICON; SILICON COMPOUNDS; TEMPERATURE;

EID: 84867770556     PISSN: 00027863     EISSN: 15205126     Source Type: Journal    
DOI: 10.1021/ja307804v     Document Type: Article

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