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Applied Physics A: Materials Science and Processing

Volumn 81, Issue 5, 2005, Pages 991-996

A valence-band and core-level photoemission study of a-SixC 1-x thin films grown by low-temperature low-pressure chemical vapour deposition

(6) Santoni, A a Lancok, J b Dhanak, V R c,d Loreti, S a Miller, G c,d Minarini, C e

a ENEA (Italy)

b INSTITUTE OF PHYSICS (Czech Republic)

c UNIVERSITY OF LIVERPOOL (United Kingdom)

d DARESBURY LABORATORY (United Kingdom)

e ENEA CR Portici (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANNEALING; BAND STRUCTURE; CHEMICAL VAPOR DEPOSITION; EXCIMER LASERS; LASER APPLICATIONS; PHOTOEMISSION; SILICON CARBIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

CORE-LEVEL PHOTOEMISSION SPECTRA; LASER ANNEALING; VALENCE BANDS;

SILICON COMPOUNDS;

EID: 23944435899 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/s00339-004-2976-4 Document Type: Article

Times cited : (14)

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