Localized surface plasmon-enhanced ultraviolet electroluminescence from n-ZnO/i-ZnO/p-GaN heterojunction light-emitting diodes via optimizing the thickness of MgO spacer layer

Applied Physics Letters

Volumn 101, Issue 14, 2012, Pages

  Liu, W Z ^a   Xu, H Y ^a   Zhang, L X ^b   Zhang, C ^a   Ma, J G ^a   Wang, J N ^b   Liu, Y C ^a  

^a NORTHEAST NORMAL UNIVERSITY   (China)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

AG NANOPARTICLE; INTERNAL QUANTUM EFFICIENCY; LOCALIZED SURFACE PLASMON; MGO; MGO SPACER; NON-RADIATIVE; PHOTON ENERGY; RESONANT ENERGY TRANSFER; SPONTANEOUS EMISSION RATES; TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE; TIME-RESOLVED; ULTRAVIOLET ELECTROLUMINESCENCE; ULTRAVIOLET LIGHT-EMITTING DIODES; ZNO;

CHARGE TRANSFER; ELECTROLUMINESCENCE; ENERGY TRANSFER; GALLIUM NITRIDE; HETEROJUNCTIONS; LIGHT EMITTING DIODES; OPTIMIZATION; PLASMONS; SURFACE PLASMON RESONANCE; ZINC OXIDE;

SILVER;

EID: 84867549482     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4757127     Document Type: Article

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