Improving emission enhancement in surface plasmon coupling with an InGaN/GaN quantum well by inserting a dielectric layer of low refractive index between metal and semiconductor

Applied Physics Letters

Volumn 94, Issue 23, 2009, Pages

  Lu, Yen Cheng ^a   Chen, Yung Sheng ^a   Tsai, Fu Ji ^a   Wang, Jyh Yang ^a   Lin, Cheng Hung ^a   Chen, Cheng Yen ^a   Kiang, Yean Woei ^a   Yang, C C ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

COUPLING MECHANISM; DENSITY OF STATE; DIELECTRIC LAYER; DISSIPATION RATES; EMISSION ENHANCEMENT; EVANESCENT FIELDS; GAN LAYERS; INGAN/GAN QUANTUM WELL; LOW REFRACTIVE INDEX; P-TYPE GAN; SURFACE PLASMON COUPLING; SURFACE PLASMON POLARITON;

GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMITTING DIODES; LIGHT REFRACTION; PLASMONS; REFRACTIVE INDEX; REFRACTOMETERS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WELLS; SILVER;

SURFACE PLASMON RESONANCE;

EID: 67649126474     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3153506     Document Type: Article

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