The effect of synthesis parameters on transport properties of nanostructured bulk thermoelectric p-type silicon germanium alloy

Physica Status Solidi (A) Applications and Materials Science

Volumn 209, Issue 10, 2012, Pages 2049-2058

  Zamanipour, Zahra ^a   Shi, Xinghua ^a   Dehkordi, Arash M ^a   Krasinski, Jerzy S ^a   Vashaee, Daryoosh ^a  

^a OKLAHOMA STATE UNIVERSITY   (United States)

Author keywords

synthesis parameters; thermal and electrical transport; thermoelectrics

Indexed keywords

ACOUSTIC-PHONON SCATTERING; BOLTZMANN TRANSPORT EQUATION; BOUNDARY SCATTERING; BULK MATERIALS; DOPING CONCENTRATION; ELECTRICAL CONDUCTIVITY; HIGH TEMPERATURE; MEAN FREE PATH; MILLING PROCESS; MODEL CALCULATIONS; NANO-STRUCTURED; NANOSTRUCTURED BULK; NANOSTRUCTURED SILICON; OPTIMUM PARAMETERS; P-TYPE; P-TYPE SILICON; PRECISE CONTROL; ROOM TEMPERATURE; SI-GE ALLOYS; SINTERING CONDITION; SYNTHESIS PARAMETERS; THERMAL AND ELECTRICAL TRANSPORT; THERMOELECTRIC MATERIAL; THERMOELECTRIC PROPERTIES; THERMOELECTRICS;

CRYSTALLINE MATERIALS; CRYSTALLITE SIZE; ELECTRIC CONDUCTIVITY; GERMANIUM ALLOYS; MECHANICAL ALLOYING; SILICON ALLOYS; SINTERING; THERMOELECTRIC EQUIPMENT; THERMOELECTRICITY; TRANSPORT PROPERTIES;

THERMAL CONDUCTIVITY;

EID: 84867499514     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201228102     Document Type: Article

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