Effects of nanoscale porosity on thermoelectric properties of SiGe

Journal of Applied Physics

Volumn 107, Issue 9, 2010, Pages

  Lee, Hohyun ^a   Vashaee, Daryoosh ^b   Wang, D Z ^c   Dresselhaus, Mildred S ^d,e   Ren, Z F ^c   Chen, Gang ^f  

^a Santa Clara University   (United States)

^b Oklahoma State University   (United States)

^c BOSTON COLLEGE   (United States)

^d USA   (United States)

^e MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^f Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BULK COUNTERPART; CONSOLIDATION PROCESS; ELECTRICAL CONDUCTIVITY; ENERGY FILTERING; LOW THERMAL CONDUCTIVITY; MACRO SCALE; MODELING RESULTS; NANO-SCALE POROSITY; NANOGRAINED MATERIALS; NUMBER DENSITY; PHONON TRANSPORT; SAMPLE DENSITY; THERMOELECTRIC APPLICATION; THERMOELECTRIC FIGURE OF MERIT; THERMOELECTRIC PROPERTIES;

ELECTRIC CONDUCTIVITY; ELECTRON ENERGY LOSS SPECTROSCOPY; NANOSTRUCTURED MATERIALS; PHONONS; POROSITY; POROUS MATERIALS; QUANTUM CHEMISTRY; SILICON ALLOYS; THERMOELECTRIC EQUIPMENT; THERMOELECTRICITY;

THERMAL CONDUCTIVITY;

EID: 77956206044     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3388076     Document Type: Article

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