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Volumn 1166, Issue , 2009, Pages 53-58

High temperature thermoelectric properties of nano-bulk silicon and silicon germanium

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY COMPOUNDS; BALL MILLING; BISMUTH COMPOUNDS; CARRIER MOBILITY; CRYSTAL IMPURITIES; GERMANIUM; HIGH PRESSURE EFFECTS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; IV-VI SEMICONDUCTORS; LEAD COMPOUNDS; NANOPARTICLES; SEMICONDUCTOR DOPING; SI-GE ALLOYS; SINGLE CRYSTALS; SINTERING; SYNTHESIS (CHEMICAL); TELLURIUM COMPOUNDS; THERMAL CONDUCTIVITY OF SOLIDS; THERMOELECTRIC ENERGY CONVERSION; THERMOELECTRIC EQUIPMENT; THERMOELECTRICITY; TIN COMPOUNDS;

EID: 74549200972     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-1166-n02-04     Document Type: Conference Paper
Times cited : (7)

References (24)
  • 1
    • 0003980328 scopus 로고
    • D. M. Rowe Ed, CRC, Boca Raton, Florida, USA
    • D. M. Rowe (Ed) CRC Handbook of Thermoelectrics, CRC, Boca Raton, Florida, USA (1995).
    • (1995) CRC Handbook of Thermoelectrics
  • 15
    • 0004045516 scopus 로고
    • Translated by A. Tybulewicz, New York, New York, USA
    • V. I. Fistul. Heavily Doped Semiconductors. (Translated by A. Tybulewicz), New York, New York, USA, (1969).
    • (1969) Heavily Doped Semiconductors
    • Fistul, V.I.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.