Electronic transport and optical properties of indium oxide thin films prepared by thermal oxidation

Solid State Sciences

Volumn 14, Issue 10, 2012, Pages 1543-1549

  Rambu, A P ^a   Sirbu, D ^a   Dobromir, M ^a   Rusu, G G ^a  

^a ALEXANDRU IOAN CUZA UNIVERSITY OF IASI   (Romania)

Author keywords

Electronic transport mechanism; Indium oxide; Single oscillator model; Structural characteristics

Indexed keywords

ABSORPTION COEFFICIENTS; AG ELECTRODE; CHARACTERISTIC PARAMETER; ELECTRICAL CONDUCTIVITY; ELECTRONIC TRANSPORT; ELECTRONIC TRANSPORT PROPERTIES; GLASS SUBSTRATES; IMPURITY CONCENTRATION; INDIUM OXIDE; METALLIC THIN FILMS; OPTICAL PARAMETER; OXIDATION TEMPERATURE; POLYCRYSTALLINE STRUCTURE; PREPARATION CONDITIONS; REFLECTION SPECTRA; SINGLE-OSCILLATOR MODEL; STRUCTURAL CHARACTERISTICS; TEMPERATURE DEPENDENCE; THERMAL OXIDATION; THERMALLY OXIDIZED; VACUUM THERMAL EVAPORATION;

ELECTRIC CONDUCTIVITY; INDIUM; OXIDATION; REFRACTIVE INDEX; SUBSTRATES; THIN FILMS; TRANSPORT PROPERTIES; X RAY DIFFRACTION;

FILM PREPARATION;

EID: 84867453963     PISSN: 12932558     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solidstatesciences.2012.08.030     Document Type: Article

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