A 2.4-GHz, 27-dBm asymmetric multilevel outphasing power amplifier in 65-nm CMOS

IEEE Journal of Solid-State Circuits

Volumn 47, Issue 10, 2012, Pages 2372-2384

  Godoy, Philip A ^a   Chung, Sungwon ^b   Barton, Taylor W ^b   Perreault, David J ^b   Dawson, Joel L ^b  

^a MARVELL SEMICONDUCTOR INC   (United States)

^b USA   (United States)

Author keywords

Digital predistortion; discrete supply modulator; linear amplification with nonlinear components (LINC); outphasing; power amplifier (PA)

Indexed keywords

CLASS E; CMOS PROCESSS; DIGITAL PREDISTORTION; DIGITAL SWITCHING; DRAIN EFFICIENCY; ENVELOPE TRACKING; LINEAR AMPLIFICATION WITH NON LINEAR COMPONENTS; MODULATION BANDWIDTH; OFDM SIGNAL; OUTPHASING; PEAK OUTPUT POWER; SUPPLY MODULATOR; SYSTEM EFFICIENCY;

CMOS INTEGRATED CIRCUITS; EFFICIENCY; MODULATION; ORTHOGONAL FREQUENCY DIVISION MULTIPLEXING; POWER AMPLIFIERS;

MODULATORS;

EID: 84867405066     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2012.2202810     Document Type: Article

References (41)

1. H. Chireix,"High-power outphasing modulation," Proc. IRE, vol. 23, pp. 1370-1392, Nov. 1935.
2. D. C. Cox,"Linear amplification with nonlinear components," IEEE Trans. Commun., vol. COM-23, no. 12, pp. 1942-1945, Dec. 1974.
3. I. Hakala, D. K. Choi, L. Gharavi, N. Kajakine, J. Koskela, and R. Kaunisto,"A 2.14-GHz Chireix outphasing transmitter," IEEE Trans. Microw. Theory Tech., vol. 53, no. 6, pp. 2129-2138, Jun. 2005.
4. F. H. Raab,"Efficiency of outphasing RF power-amplifier systems," IEEE Trans. Commun., vol. COM-33, no. 9, pp. 1094-1099, Sep. 1994.
5. R. Beltran, F. H. Raab, and A. Velazquez,"HF outphasing transmitter using class-E power amplifiers," in IEEE MTT-S Int. Microw. Symp. Dig., 2009, pp. 757-760.
6. S. Moloudi, K. Takinami, M. Youssef, M. Mikhemar, and A. Abidi,"An outphasing power amplifier for a software-defined radio transmitter," in Proc. Int. Solid-State Circuits Conf. Tech. Dig., Feb. 2008, pp. 568-636.
7. J. Yao and S. I. Long,"Power amplifier selection for LINC applications," IEEE Trans. Circuits Syst. II, Exp. Briefs, vol. 53, no. 8, pp. 763-767, Aug. 2006. (Pubitemid 44363894)
8. H. Xu, Y. Palaskas, A. Ravi, M. Sajadieh, M. El-Tanani, and K. Soumyanath,"A flip-chip-packaged 25.3 dBm class-D outphasing power amplifier in 32 nm CMOS for WLAN application," IEEE J. Solid-State Circuits, vol. 46, no. 7, pp. 1596-1605, Jul. 2011.
9. S. Kee, I. Aoki, A. Hajimiri, and D. Rutledge,"The class E/F family of ZVS switching amplifiers," IEEE Trans. Microw. Theory Tech., vol. 51, no. 6, pp. 1677-1690, Jun. 2003.
10. F. H. Raab, P. Asbeck, S. Cripps, P. Kenington, Z. Popovich, N. Pothecary, J. Sevic, and N. Sokal,"RF and microwave power amplifier and transmitter technologies-Part 2," High Frequency Electron., pp. 22-36, May 2003.
11. L. R. Kahn,"Single-sideband transmission by envelope elimination and restoration," Proc. IRE, vol. 40, no. 7, pp. 803-806, Jul. 1952.
12. V. Petrovic and W. Gosling,"Polar-loop transmitter," Proc. IRE, vol. 15, no. 10, pp. 286-288, May 1979.
13. P. Reynaert and M. S. J. Steyaert,"A 1.75-GHz polar modulated CMOS RF power amplifier for GSM-EDGE," IEEE J. Solid-State Circuits, vol. 40, no. 12, pp. 2598-2608, Dec. 2005.
14. F. Wang, D. Kimball, J. Popp, A. Yang, D. Lie, P. Asbeck, and L. Larson,"Wideband envelope elimination and restoration power amplifier with high efficiency wideband envelope amplifier for WLAN 802.11g applications," in IEEEMTT-S Int. Microw. Symp. Dig., 2005, pp. 645-648. (Pubitemid 44479020)
15. J. S. Walling, S. S. Taylor, and D. J. Allstot,"A class-G supply-modulator and class-E PA in 130 nm CMOS," IEEE J. Solid-State Circuits, vol. 44, no. 9, pp. 2339-2347, Sep. 2009.
16. A. Shameli, A. Safarian, A. Rofougaran, M. Rofougaran, and F. D. Flaviis,"A two-point modulation technique for CMOS power amplifier," IEEE Trans.Microw. Theory Tech., vol. 55, no. 1, pp. 31-38, Jan. 2008.
17. J. Choi, D. Kim, D. Kang, M. Jun, B. Jin, J. Park, and B. Kim,"A 45/46/34% PAE linear polar transmitter for EDGE/WCDMA/Mobile- WiMAX," in Proc. IEEE RFIC Symp., 2009.
18. J. Choi, J. Yim, J. Yang, J. Kim, J. Cha, and B. Kim,"Delta-Sigma digitized RF transmitter," in IEEE MTT-S Int. Microw. Symp. Dig., 2007, pp. 81-84.
19. S. Chung, P. A. Godoy, T. W. Barton, E. W. Huang, D. J. Perreault, and J. L. Dawson,"Asymmetric multilevel outphasing architecture for multistandard transmitters," in Proc. IEEE RFIC Symp., 2009, pp. 237-240.
20. J. Hur, O. Lee, K. Kim, K. Lim, and J. Laskar,"Highly efficient uneven multi-level LINC transmitter," Electron. Lett., pp. 837-838, Jul. 2009.
21. S.Chung, P. A. Godoy, T.W. Barton,E.W.Huang,D. J. Perreault, and J. L. Dawson,"Asymmetric multilevel outphasing transmitter using class-E PAs with discrete pulsewidth modulation," in IEEE MTT-S Int. Microw. Symp. Dig., 2010, pp. 264-267.
22. P. A. Godoy, S. Chung, T. W. Barton, D. J. Perreault, and J. L. Dawson,"A 2.5-GHz asymmetric multilevel outphasing power amplifier in 65-nm CMOS," in Proc. IEEE Power Amplifiers for Wireless and Radio Applic., Jan. 2011, pp. 57-60.
23. P. A. Godoy, S. Chung, T. W. Barton, D. J. Perreault, and J. L. Dawson,"A highly efficient 1.95-GHz, 18-Wasymmetric multilevel outphasing transmitter for wideband applications," in IEEE MTT-S Int. Microw. Symp. Dig., 2011, pp. 1-4.
24. M.-H. Huang and K.-H. Chen,"Single-inductor multi-output (SIMO) DC-DC converters with high light-load efficiency and minimized cross-regulation for portable devices," IEEE J. Solid-State Circuits, vol. 44, no. 4, pp. 1099-1111, Apr. 2009.
25. D. Y. C. Lie, J. D. Popp, F.Wang, D. Kimball, and L. E. Larson,"Linearization of highly-efficient monolithic class E SiGe power amplifiers with envelope-tracking (ET) and envelope-elimination-and-restoration (EER) at 900 MHz," in Proc. IEEE Dallas Circuits Syst. Workshop System-on-Chip, Nov. 2007, pp. 1-4.
26. S. Chung, J. W. Holloway, and J. L. Dawson,"Energy-efficiency digital predistortion with lookup table training using analog Cartesian feedback," IEEE Trans. Microw. Theory Tech., vol. no. 10, pp. 2248-2258, Oct. 2009.
27. J. Mehta et al.,"An efficient linearization scheme for a digital polar EDGE transmitter," IEEE Trans. Circuits Syst. II, Exp. Briefs, vol. 57, no. 3, pp. 193-197, Mar. 2010.
28. A. Phan, G. W. Wornell, and C. G. Sodini,"A digital amplitude-tophase conversion for high efficiency linear outphase power amplifiers," in Proc. IEEE Int. Conf. Acoust., Speech, Signal Process., Toulouse, France, May 2006, vol. 4, pp. 97-100.
29. A. Pham,"Outphase power amplifiers in OFDM systems," Ph.D. dissertation, Dept. Electr. Eng. Comput. Sci., Mass. Inst. Technol., Cambridge, MA, Sep. 2005.
30. M. Acar, M. P. van der Heijden, I. Volokhine, M. Apostolidou, J. Sonsky, and J. S. Vromans,"Scalable CMOS power devices with 70% PAE and 1, 2 and 3.4 watt output power at 2 GHz," in Proc. IEEE RFIC Symp., Jun. 2009, pp. 233-236.
31. M. Acar, A. Annema, and B. Nauta,"Variable-voltage class-E power amplifiers," in IEEE MTT-S Int. Microw. Symp. Dig., Jun. 2007, pp. 1095-1098. (Pubitemid 47486188)
32. M. Apostolidou,M. P. van der Heijden, D.M.W. Leenaerts, J. Sonsky, A. Heringa, and I. Volokhine,"A 65 nm CMOS 30 dBm class-E power amplifier with 60% power added efficiency," in Proc. IEEE RFIC Symp., 2008, pp. 141-144.
33. M. Apostolidou,M. P. van der Heijden, D.M.W. Leenaerts, J. Sonsky, A. Heringa, and I. Volokhine,"A 65 nm CMOS 30 dBm class-E RF power amplifier with 60% PAE and 40% PAE at 16 dB back-off," IEEE J. Solid-State Circuits, vol. 44, no. 5, pp. 1372-1379, May 2009.
34. D. Chowdhury, C. Hull, O. Degani, P. Goyal, Y. Wang, and A. Niknejad,"A single-chip highly linear 2.4 GHz 30 dBm power amplifier in 90 nm CMOS," in Int. Solid-State Circuits Conf. Tech. Dig., Feb. 2009, pp. 378-379.
35. J. Kang, A. Hajimiri, and B. Kim,"A single-chip linear CMOS power amplifier for 2.4 GHz WLAN," in Int. Solid-State Circuits Conf. Tech. Dig., Feb. 2006, pp. 208-209.
36. T. W. Barton, S. Chung, P. A. Godoy, D. J. Perreault, and J. L. Dawson,"A 12-bit resolution, 200-MSample/second phase modulator for a 2.5 GHz carrier with discrete carrier pre-rotation in 65 nm CMOS," in Proc. IEEE RFIC Symp., Jun. 2011, pp. 1-4.
37. S. Yoo, J. Walling, E. Woo, B. Jann, and D. Allstot,"A switched-capacitor RF power amplifier," IEEE J. Solid-State Circuits, vol. 46, no. 1, pp. 1-11, Jan. 2011.
38. O. Degani, F. Cossoy, S. Shahaf, D. Chowdhury, C. Hull, C. Emanuel, and R. Shmuel,"A 90 nm CMOS power amplifier for 802.16e (WiMAX) applications," in Proc. IEEE RFIC Symp., Jun. 2009, pp. 373-376.
39. A. Afsahi, A. Behzad, V. Magoon, and L. Larson,"Fully integrated dual-band power amplifiers with on-chip baluns in 65 nm CMOS for an 802.11n MIMO WLAN SoC," in Proc. IEEE RFIC Symp., Jun. 2009, pp. 365-368.
40. D. Chowdhury, S. Thyagarajan, L. Ye, E. Alon, and A. Niknejad,"A fully-integrated efficient CMOS inverse class-D power amplifier for digital polar transmitters," in Proc. IEEE RFIC Symp., Jun. 2011, pp. 1-4.
41. W. Tai, H. Xu, A. Ravi, H. Lakdawala, O. Degani, L. Carley, and Y. Palaskas,"A 31.5 dBm outphasing class-D power amplifier in 45 nm CMOS with back-off efficiency enhancement by dynamic power control," in Proc. IEEE ESSCIRC, Sep. 2011, pp. 131-134.