A 65nm CMOS 30dBm class-E RF power amplifier with 60% power added efficiency

Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium

Volumn , Issue , 2008, Pages 141-144

  Apostolidou, M ^a   Van Der Heijden, M P ^a   Leenaerts, D M W ^a   Sonsky, J ^b,c   Heringa, A ^b,c   Volokhine, I ^b,c  

^a NXP SEMICONDUCTORS   (Netherlands)

^b NXP TSMC Research Center   (Netherlands)

^c NXP TSMC Research Center   (Belgium)

Author keywords

Cascode; Class E; CMOS PA; Driver stage; HV device; PAE; Self biasing technique

Indexed keywords

AMPLIFIERS (ELECTRONIC); BROADBAND AMPLIFIERS; DC GENERATORS; DIGITAL INTEGRATED CIRCUITS; ELECTRONICS INDUSTRY; EPITAXIAL GROWTH; INTEGRATED CIRCUITS; MICROELECTROMECHANICAL DEVICES; OPTICAL DESIGN; RADIO FREQUENCY AMPLIFIERS; RADIO WAVES; STANDARDS; TECHNOLOGY; TELECOMMUNICATION NETWORKS;

65NM CMOS TECHNOLOGY; BACK-OFF; CASCODE; CLASS-E; CMOS PA; DRIVER STAGE; HIGH OUTPUT POWER; HIGH POWERS; HIGH VOLTAGES; HV DEVICE; PAE; POWER BACK-OFF; POWER-ADDED EFFICIENCIES; RADIO FREQUENCY INTEGRATED CIRCUITS; RF POWER AMPLIFIERS; SELF-BIASING; SELF-BIASING TECHNIQUE; SINGLE-ENDED; SUB-MICRON CMOS TECHNOLOGY;

POWER AMPLIFIERS;

EID: 51849133097     PISSN: 15292517     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RFIC.2008.4561404     Document Type: Conference Paper

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