Scalable CMOS power devices with 70% PAE and 1, 2 and 3.4 watt output power at 2GHz

Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium

Volumn , Issue , 2009, Pages 233-236

  Acar, Mustafa ^a   Van Der Heijden, Mark P ^a   Volokhine, Iouri ^b   Apostolidou, Melina ^a   Sonsky, Jan ^b   Vromans, Jan S ^a  

^a NXP SEMICONDUCTORS   (Netherlands)

^b NXP TSMC Research Center   (Belgium)

Author keywords

Power devices; RF; Switching power amplifiers

Indexed keywords

CLASS-E POWER AMPLIFIERS; HIGH VOLTAGE; LAYOUT DESIGNS; OUTPUT POWER; OUTPUT POWER LEVELS; POWER DEVICES; POWER-ADDED EFFICIENCY; RF; RF-POWER; SWITCHING POWER AMPLIFIERS;

DIGITAL INTEGRATED CIRCUITS; ELECTRIC EQUIPMENT; INTEGRATED CIRCUITS; POWER AMPLIFIERS; RADIO; RADIO FREQUENCY AMPLIFIERS; RADIO WAVES;

MOS DEVICES;

EID: 70350212780     PISSN: 15292517     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RFIC.2009.5135529     Document Type: Conference Paper

References (10)

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