Comprehensive dielectric performance of bismuth acceptor doped BaTiO 3 based nanocrystal thin film capacitors

Journal of Materials Chemistry

Volumn 22, Issue 41, 2012, Pages 21862-21870

  Liu, Shuangyi ^a,b,c   Zhang, Henan ^a   Sviridov, Lev ^b   Huang, Limin ^a,b   Liu, Xiaohua ^a   Samson, Jacopo ^d   Akins, Dan ^a   Li, Jackie ^c   O'Brien, Stephen ^a,b  

^a CITY COLLEGE OF NEW YORK   (United States)

^b CITY UNIVERSITY OF NEW YORK   (United States)

^c City College of New York   (United States)

^d CITY UNIVERSITY OF NEW YORK   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BATIO; DEVICE QUALITY; DIELECTRIC ANALYSIS; DIELECTRIC FUNCTIONS; DIELECTRIC PERFORMANCE; EQUIVALENT SERIES RESISTANCE; HIGHER FREQUENCIES; LOW TEMPERATURES; MATERIALS RESEARCH; MOLAR CONCENTRATION; NANOCRYSTAL THIN FILMS; NO ANNEALING; NUCLEOPHILIC ADDITIONS; POLARIZATION EFFECT; RAMAN ANALYSIS; RIETVELD; SOLVOTHERMAL ROUTE; VERY HIGH FREQUENCY; XRD;

ADDITION REACTIONS; BARIUM TITANATE; CAPACITORS; ELECTRIC RESISTANCE; ELECTRICAL ENGINEERING; NANOCOMPOSITES; NANOCRYSTALS; PERMITTIVITY; RAMAN SPECTROSCOPY; RIETVELD REFINEMENT; THIN FILM CIRCUITS; THIN FILMS; TITANIUM;

BISMUTH;

EID: 84867301462     PISSN: 09599428     EISSN: 13645501     Source Type: Journal    
DOI: 10.1039/c2jm34044e     Document Type: Article

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