Effect of acceptor concentration on the bulk electrical conduction in acceptor (Mg)-doped BaTiO3

Journal of Applied Physics

Volumn 107, Issue 10, 2010, Pages

  Yoon, Seok Hyun ^a,b   Randall, Clive A ^a   Hur, Kang Heon ^b  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b Samsung Electro Mechanics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR CONCENTRATIONS; BULK CONDUCTIVITIES; CHEMICAL MODEL; DEFECT CHEMISTRY MODELS; ELECTRICAL CONDUCTION; ELECTRICAL CONDUCTIVITY; ELECTRONIC CARRIERS; ELECTRONIC CONDUCTION; HIGH TEMPERATURE; HOPPING CONDUCTION; IMPEDANCE SPECTROSCOPY; IONIZED ACCEPTOR; LOW CONCENTRATIONS; LOW TEMPERATURES; MG CONCENTRATIONS; MIXED CONDUCTION; TEMPERATURE RANGE;

ACTIVATION ANALYSIS; ACTIVATION ENERGY; DEFECTS; ELECTRIC CONDUCTIVITY; SEMICONDUCTING GALLIUM COMPOUNDS;

CONCENTRATION (PROCESS);

EID: 77953012475     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3428457     Document Type: Article

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