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Volumn 48, Issue 20, 2012, Pages 1261-1263

Electrohydrodynamic printed TiO 2 flexible memory device - Fabrication and characterisation

Author keywords

[No Author keywords available]

Indexed keywords

BENDING RADIUS; ELECTROHYDRODYNAMIC PATTERNING; FABRICATED DEVICE; FLEXIBLE SUBSTRATE; LOW-RESISTANCE STATE; POLYETHERSULFONES; RESISTANCE VALUES; RESISTIVE MEMORIES; TIO;

EID: 84867064685     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el.2012.1003     Document Type: Article
Times cited : (12)

References (13)
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    • Strukov, D.B.1    Snider, G.S.2    Stewart, D.R.3    Williams, R.S.4
  • 2
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    • Nanoscale resistive switches: Devices, fabrication and integration
    • 10.1007/s00339-011-6288-1
    • Xia, Q.: ' Nanoscale resistive switches: devices, fabrication and integration ', Appl. Phys. A, 2011, 102, p. 955-965 10.1007/s00339-011-6288-1
    • (2011) Appl. Phys. A , vol.102 , pp. 955-965
    • Xia, Q.1
  • 3
    • 76049115964 scopus 로고    scopus 로고
    • Switching mechanisms in microscale memristors
    • 10.1049/el.2010.2716 0013-5194
    • Prodromakis, T., Michelakis, K., and Toumazou, C.: ' Switching mechanisms in microscale memristors ', Electron. Lett., 2010, 46, (1), p. 63-65 10.1049/el.2010.2716 0013-5194
    • (2010) Electron. Lett. , vol.46 , Issue.1 , pp. 63-65
    • Prodromakis, T.1    Michelakis, K.2    Toumazou, C.3
  • 4
    • 73649141715 scopus 로고    scopus 로고
    • Resistive switching characteristics of ZnO thin film grown on stainless steel for flexible nonvolatile memory devices
    • 10.1063/1.3280864 0003-6951
    • Lee, S.H., Kim, H.J., Yun, D.J., Rhee, S.W., and Yong, K.J.: ' Resistive switching characteristics of ZnO thin film grown on stainless steel for flexible nonvolatile memory devices ', Appl. Phys. Lett., 2009, 95, (26), p. 262113-3 10.1063/1.3280864 0003-6951
    • (2009) Appl. Phys. Lett. , vol.95 , Issue.26 , pp. 262113-262123
    • Lee, S.H.1    Kim, H.J.2    Yun, D.J.3    Rhee, S.W.4    Yong, K.J.5
  • 6
    • 78650101965 scopus 로고    scopus 로고
    • Flexible resistance memory devices based on Cu/ZnO:Mg/ITO structure
    • 10.1002/pssr.201004364
    • Shi, L., Shang, D.S., Sun, J.R., and Shen, B.G.: ' Flexible resistance memory devices based on Cu/ZnO:Mg/ITO structure ', Phys. Status Solidi: Rapid Res. Lett., 2010, 4, (12), p. 344-346 10.1002/pssr.201004364
    • (2010) Phys. Status Solidi: Rapid Res. Lett. , vol.4 , Issue.12 , pp. 344-346
    • Shi, L.1    Shang, D.S.2    Sun, J.R.3    Shen, B.G.4
  • 7
    • 77956257348 scopus 로고    scopus 로고
    • Cost-effective fabrication of nanoscale electrode memristors with reproducible electrical response
    • 10.1049/mnl.2009.0106
    • Michelakis, K., Prodromakis, T., and Toumazou, C.: ' Cost-effective fabrication of nanoscale electrode memristors with reproducible electrical response ', Micro Nano Lett., 2010, 5, (2), p. 91-94 10.1049/mnl.2009.0106
    • (2010) Micro Nano Lett. , vol.5 , Issue.2 , pp. 91-94
    • Michelakis, K.1    Prodromakis, T.2    Toumazou, C.3
  • 8
    • 77954144265 scopus 로고    scopus 로고
    • Memristive behavior in thin anodic titania
    • 10.1109/LED.2010.2049092 0741-3106
    • Miller, K., Nalwa, K.S., Bergerud, A., and Neihart, N.M.: ' Memristive behavior in thin anodic titania ', IEEE Electron Device Lett., 2010, 31, (7), p. 737-739 10.1109/LED.2010.2049092 0741-3106
    • (2010) IEEE Electron Device Lett. , vol.31 , Issue.7 , pp. 737-739
    • Miller, K.1    Nalwa, K.S.2    Bergerud, A.3    Neihart, N.M.4
  • 12
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    • Cost-effective fabrication of memristive devices with ZnO thin film using printed electronics technologies
    • 10.1007/s00339-011-6670-z
    • Choi, K.H., Mustafa, M., Rahman, K., Ko, J.B., and Doh, Y.H.: ' Cost-effective fabrication of memristive devices with ZnO thin film using printed electronics technologies ', Appl. Phys. A, 2012, 106, p. 165-170 10.1007/s00339-011-6670-z
    • (2012) Appl. Phys. A , vol.106 , pp. 165-170
    • Choi, K.H.1    Mustafa, M.2    Rahman, K.3    Ko, J.B.4    Doh, Y.H.5
  • 13
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    • Fabrication of TiO2 thin film memristor device using electrohydrodynamic inkjet printing
    • doi: 10.1016/j.tsf.2012.03.003 10.1016/j.tsf.2012.03.003 0040-6090
    • Duraisamy, N., Muhammad, N.M., Kim, H.C., Jo, J.D., and Choi, K.H.: ' Fabrication of TiO2 thin film memristor device using electrohydrodynamic inkjet printing ', Thin Solid Films, 2012, doi: 10.1016/j.tsf.2012.03.003 10.1016/j.tsf.2012.03.003 0040-6090
    • (2012) Thin Solid Films
    • Duraisamy, N.1    Muhammad, N.M.2    Kim, H.C.3    Jo, J.D.4    Choi, K.H.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.