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Volumn 31, Issue 7, 2010, Pages 737-739

Memristive behavior in thin anodic Titania

Author keywords

Electrochemical anodization; memristor; titanium dioxide

Indexed keywords

ANODIC TITANIA; ANODIZATION TIME; ANODIZATIONS; COMMON MATERIALS; ELECTROCHEMICAL ANODIZATIONS; MEMRISTIVE BEHAVIOR; MEMRISTOR; METAL/OXIDE INTERFACE; TIO;

EID: 77954144265     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2049092     Document Type: Article
Times cited : (110)

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  • 2
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  • 4
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    • S. H. Jo, K. H. Kim, and W. Lu, "High-density crossbar arrays based on Si memristive system," Nano Lett., vol.9, no.2, pp. 870-874, Feb. 2009.
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    • Jo, S.H.1    Kim, K.H.2    Lu, W.3
  • 7
    • 40449092679 scopus 로고    scopus 로고
    • CMOS compatible nanoscale nonvolatile resistance switching memory
    • Feba.
    • S. H. Jo and W. Lu, "CMOS compatible nanoscale nonvolatile resistance switching memory," Nano Lett., vol.8, no.2, pp. 392-397, Feb. 2008.
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    • Jo, S.H.1    Lu, W.2
  • 12
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    • Nanoionics-based resistive switching memories
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    • R. Waser and M. Aono, "Nanoionics-based resistive switching memories," Nat. Mater., vol.6, no.11, pp. 833-840, Nov. 2007.
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    • Waser, R.1    Aono, M.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.