CdSe/ZnO composite via galvanic displacement followed by photocathodic deposition: Hybrid electrosynthesis and characterization

Journal of Physical Chemistry C

Volumn 116, Issue 38, 2012, Pages 20146-20153

  Choi, Seungun ^a   Chae, Yujin ^a   Ham, Sunyoung ^a,c   Lee, Wooju ^a   Myung, Noseung ^a   Rajeshwar, Krishnan ^b  

^a Konkuk University   (South Korea)

^b UNIVERSITY OF TEXAS AT ARLINGTON   (United States)

^c MEMC Korea Company   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANODIC PHOTOCURRENTS; AU ELECTRODES; CDSE/ZNO; COMPOSITE COMPONENTS; COMPOSITE NANOWIRES; COMPOSITE SAMPLES; ENERGY DISPERSIVE X-RAY; GALVANIC DISPLACEMENT; IN-SITU; INDIUM OXIDE; LIGHT ILLUMINATION; N-TYPE SEMICONDUCTORS; P-TYPE; PHOTOELECTROCHEMICALS; POLYCRYSTALLINE; QUARTZ CRYSTAL MICROGRAVIMETRY; SN-DOPED; STRIPPING VOLTAMMETRY; ZNO; ZNO NANOWIRE ARRAYS;

DOPING (ADDITIVES); ELECTRODEPOSITION; NANOWIRES; SCANNING ELECTRON MICROSCOPY; TIN; X RAY ANALYSIS; X RAY POWDER DIFFRACTION;

ZINC OXIDE;

EID: 84866867944     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp3065954     Document Type: Article

References (41)

1. For example: Kim, Y.-I.; Seshadri, R. Inorg. Chem. 2008, 47, 8437. See also references therein
2. Tena-Zaera, R.; Elias, J.; Levy-Clement, C. Appl. Phys. Lett. 2008, 93, 233119
3. Elias, J.; Tena-Zaera, R.; Wang, G.-Y.; Levy-Clement, C. Chem. Mater. 2008, 20, 6633
4. Tang, Y.; Hu, X.; Chen, M.; Luo, L.; Li, B.; Zhang, L. Electrochim. Acta 2009, 54, 2742
5. Chen, J.; Li, C.; Zhao, D. W.; Lei, W.; Zhang, Y.; Cole, M. T.; Chu, D. P.; Wang, B. P.; Cui, Y. P.; Sun, X. W.; Milne, W. I. Electrochem. Commun. 2010, 12, 1432
6. Luan, C.; Vaneski., A.; Susha, A. S.; Xu, X.; Wang, H.-E.; Chen, X.; Xu, J.; Zhang, W.; Lee, C.-S.; Rogach, A. L.; Zapien, J. A. Nanoscale Res. Lett. 2011, 6, 340
7. Hodes, G. J. Phys. Chem. C 2008, 112, 17778
8. Shen, Q.; Zhao, X.; Zhou, S.; Hou, W.; Zhu, J.-J. J. Phys. Chem. C 2011, 115, 17958
9. Lim, C.-S.; Chen, M.-L.; Oh, W.-C. Bull. Korean Chem. Soc. 2011, 32, 1657
10. Barpuzary, D.; Khan, Z.; Vinothkumar, N.; De, M.; Qureshi, M. J. Phys. Chem. C 2012, 116, 150
11. Levy-Clement, C.; Elias, J.; Tena-Zaera, R. Phys. Status. Solidi C 2009, 6, 1596
12. Majidi, H.; Baxter, J. B. Electrochim. Acta 2011, 56, 2703
13. Tena-Zaera, R.; Katty, A.; Bastide, S.; Levy-Clement, C. Chem. Mater. 1626, 2007, 19
14. Rajeshwar, K. Adv. Mater. 1992, 4, 23
15. Hodes, G. In Physical Electrochemistry, Vol. 487; Marcel Dekker: New York, 1995, p 40.
16. Schlesinger, T. E.; Rajeshwar, K.; de Tacconi, N. R. Ch. 14. In Modern Electroplating; Schlesinger, M.; Paunovi, M., Eds.; John Wiley & Sons: New York, 2010; p 383.
17. Sun, Y.; Xia, Y. Science 2002, 298, 2176
18. Magagnin, L.; Bertani, V.; Cavallotti, P. L.; Maboudian, R.; Carraro, C. Microelectron. Eng. 2002, 64, 479
19. Johnson, M.; Kelly, J. A.; Henderson, E. J.; Veinot, J. G. C. IOP Conf. Ser.: Mater. Sci. Eng. 2009, 6, 012031
20. Mohl, M.; Dobo, D.; Kukovecz, A.; Konya, Z.; Kprdas, K.; Wei, J.; Vajtai, R.; Ajayan, P. M. J. Phys. Chem. C 2011, 115, 9403
21. Chenthamarakshan, C. R.; Ming, Y.; Rajeshwar, K. Chem. Mater. 2000, 12, 3538
22. Somasundaram, S.; Chenthamarakshan, C. R.; de Tacconi, N. R.; Ming, Y.; Rajeshwar, K. Chem. Mater. 2004, 16, 3846
23. Levy-Clement, C.; Tena-Zaera, R.; Ryan, M. A.; Katty, A.; Hodes, G. Adv. Mater. 2005, 17, 1512
24. Janaky, C.; de Taconni, N. R.; Chanmanee, W.; Rajeshwar, K. J. Phys. Chem. C. 2012, in press.
25. Dloczik, L.; Kõnenkamp, R. Nano Lett. 2003, 3, 651
26. Zhang, L.; Chen, Z.; Tang, Y.; Jia, Z. Thin Solid Films 2005, 492, 24
27. Ham, S.; Jeon, S.; Lee, U.; Park, M.; Paeng, K.-J.; Myung, N.; Rajeshwar, K. Anal. Chem. 2008, 80, 6724
28. Finlayson, A. P.; Tsaneva, V. N.; Lyons, L.; Clark, M.; Glowacki, B. A. Phys. Status Solidi A 2006, 203, 327
29. Pankove, J. L. Optical Processes in Semiconductors; Prentice Hall: Englewood Cliffs, NJ, 1971.
30. Hu, F.; Chan, K. C.; Yue, T. M.; Surya, C. J. Phys. Chem. C 2010, 114, 5811
31. Wang, J.-G.; Tian, M.-L.; Kumar, N.; Mallouk, T. Nano Lett. 2005, 5, 1247
32. Pradhan, D.; Su, S.; Sindhwani, S.; Honek, J. F.; Leung, K. T. J. Phys. Chem. C 2011, 115, 18149
33. Schlesinger, M. Ch. 14. In Modern Electroplating; Schlesinger, M.; Paunovi, M., Eds.; John Wiley & Sons: New York, 2010; p 131.
34. Bard, A. J.; Parsons, R.; Jordan, J. Standard Potentials in Aqueous Solution; Marcel Dekker: New York, 1985.
35. For example: Frese, K. W. Appl. Phys. Lett. 1982, 40, 275
36. Miyamoto, Y. Jpn. J. Appl. Phys. 1980, 19, 1813
37. Zhang, Y.; Wang, Y.; Deng, Y.; Li, M.; Bai, J. ACS Appl. Mater. Interfaces 2012, 4, 65
38. Wei, C.; Rajeshwar, K. J. Electroanal. Chem. 1994, 375, 109
39. Ham, S.; Choi, S.; Chae, Y.; Lee, W. J.; Paeng, K.-J.; Kim, W.-G.; Myung, N. Bull. Korean Chem. Soc. 2010, 31, 3403
40. Ham, S.; Choi, B.; Paeng, K.-J.; Myung, N.; Rajeshwar, K. Electrochem. Commmun. 2007, 9, 1293
41. Sowa, H. Solid State Sci. 2005, 7, 1384