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Volumn 112, Issue 46, 2008, Pages 17778-17787

Comparison of dye- and semiconductor-sensitized porous nanocrystalline liquid junction solar cells

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRANSFER; ELECTRIC CONDUCTIVITY; ION EXCHANGE; PHOTOVOLTAIC CELLS; SEMICONDUCTING INDIUM; SEMICONDUCTOR MATERIALS; SOLAR CELLS; SOLAR ENERGY; SOLAR EQUIPMENT;

EID: 57249087391     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp803310s     Document Type: Article
Times cited : (540)

References (67)
  • 7
    • 57249100870 scopus 로고    scopus 로고
    • We can estimate the absorption of a typical II-VI semiconductor, assuming the realistic scenario of a single layer of 5 nm particles adsorbed onto a 20 nm particle size porous oxide film. Assuming full coverage, each oxide particle is equivalent to 10 nm of absorbing semiconductor. Allowing for the varying thickness of a spherical particle coverage and the fact that there will be no coverage of the oxide at points of contact between the oxide particles, we divide this 10 nm by 2 to give a thickness of 5 nm semiconductor/20 nm oxide. This translates to 250 nm semiconductor for a 1 μm thick oxide film, already a fairly strongly-absorbing film. A 1 μm thick II-VI semiconductor absorbs strongly (probably more strongly than typical dye cells of 10//m oxide thickness, Therefore, no more than a few micrometers thick oxide film is needed for good absorption. Of course, this estimation will vary with the absorption coefficient of the semiconductor some absorb more strongly than II-VIs a
    • We can estimate the absorption of a typical II-VI semiconductor, assuming the realistic scenario of a single layer of 5 nm particles adsorbed onto a 20 nm particle size porous oxide film. Assuming full coverage, each oxide particle is equivalent to 10 nm of absorbing semiconductor. Allowing for the varying thickness of a spherical particle coverage and the fact that there will be no coverage of the oxide at points of contact between the oxide particles, we divide this 10 nm by 2 to give a thickness of 5 nm semiconductor/20 nm oxide. This translates to 250 nm semiconductor for a 1 μm thick oxide film, already a fairly strongly-absorbing film. A 1 μm thick II-VI semiconductor absorbs strongly (probably more strongly than typical dye cells of 10//m oxide thickness). Therefore, no more than a few micrometers thick oxide film is needed for good absorption. Of course, this estimation will vary with the absorption coefficient of the semiconductor (some absorb more strongly than II-VIs and others more weakly).
  • 12
    • 38649129891 scopus 로고    scopus 로고
    • A recent paper using CdS on TiO2 nanotubes in sulfide electrolyte (no S) reported a cell efficiency of 4.15, a) Sun, W.-T, Yu, Y, Pan, H.-Y, Gao, X.-F, Chen, Q, Peng, L.-M J. Am. Chem. Soc. 2008, 130, 1124. However, this is not a true conversion efficiency since the photovoltage was measured relative to the Ag/AgCl reference electrode rather than to the counter electrode in the sulfide electrolyte. The real cell efficiency would be ca. 1, The efficiency in ref 10 was also measured with a threeelectrode setup. The reference electrode in this case was a Pt wire pseudopolysulfide (the electrolyte used) reference. The real efficiency would be decreased slightly by polarization of the counter electrode assuming a counter electrode of the same size as the photoelectrode
    • 2 nanotubes in sulfide electrolyte (no S) reported a cell efficiency of 4.15%. (a) Sun, W.-T.; Yu, Y.; Pan, H.-Y.; Gao, X.-F.; Chen, Q.; Peng, L.-M J. Am. Chem. Soc. 2008, 130, 1124. However, this is not a true conversion efficiency since the photovoltage was measured relative to the Ag/AgCl reference electrode rather than to the counter electrode in the sulfide electrolyte. The real cell efficiency would be ca. 1%. The efficiency in ref 10 was also measured with a threeelectrode setup. The reference electrode in this case was a Pt wire pseudopolysulfide (the electrolyte used) reference. The real efficiency would be decreased slightly by polarization of the counter electrode (assuming a counter electrode of the same size as the photoelectrode).
  • 13
    • 0018996325 scopus 로고    scopus 로고
    • 2).
    • 2).
  • 14
    • 57249087945 scopus 로고    scopus 로고
    • We use the terms trap and surface state rather interchangeably. In this paper, the term surface state is generally meant to also imply a charge trap. Although the term trap is therefore more often used here, the term surface state is used where it is more commonly recognized in the general literature (e.g, when discussing electron-hole recombination in quantum dots) or if we have previously used the term surface state in the same part of the paper
    • We use the terms "trap" and "surface state" rather interchangeably. In this paper, the term "surface state" is generally meant to also imply a charge trap. Although the term trap is therefore more often used here, the term surface state is used where it is more commonly recognized in the general literature (e.g., when discussing electron-hole recombination in quantum dots) or if we have previously used the term surface state in the same part of the paper).
  • 26
    • 57249099792 scopus 로고    scopus 로고
    • Size quantization in semiconductor nanocrystals leads to a number of changes in the properties of the absorbing semiconductor that are important in the present context. First, the bandgap increases with decreasing crystal size (increasing size quantization, This affects the absorption spectrum of the semiconductor. It also changes the band (level) positions of the semiconductor conduction band moves upwards and valence band downwards to relative extents determined by the electron and hole effective masses, and therefore changes the energy offsets between semiconductor and oxide. Finally, increasing quantization increases the level spacings in the semiconductor
    • Size quantization in semiconductor nanocrystals leads to a number of changes in the properties of the absorbing semiconductor that are important in the present context. First, the bandgap increases with decreasing crystal size (increasing size quantization). This affects the absorption spectrum of the semiconductor. It also changes the band (level) positions of the semiconductor (conduction band moves upwards and valence band downwards to relative extents determined by the electron and hole effective masses), and therefore changes the energy offsets between semiconductor and oxide. Finally, increasing quantization increases the level spacings in the semiconductor.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.