Ozone-exposure and annealing effects on graphene-on-SiO 2 transistors

Applied Physics Letters

Volumn 101, Issue 12, 2012, Pages

  Zhang, E X ^a   Newaz, A K M ^b   Wang, B ^b   Zhang, C X ^a   Fleetwood, D M ^a,b   Bolotin, K I ^b   Schrimpf, R D ^a   Pantelides, S T ^a,b   Alles, M L ^a  

^a VANDERBILT UNIVERSITY   (United States)

^b VANDERBILT UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING EFFECTS; C ATOMS; DEFECT GENERATION; GRAPHENE TRANSISTORS; LOCAL DEFECTS; OXYGEN ADSORPTION; RESISTANCE INCREASE; RESISTANCE MEASUREMENT; SURFACE OXYGEN; UV OZONE; VOID FORMATION;

CARBON DIOXIDE; DENSITY FUNCTIONAL THEORY; GAS ADSORPTION; OZONE; RAMAN SPECTROSCOPY;

GRAPHENE;

EID: 84866840096     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4753817     Document Type: Article

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