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Journal of Non-Crystalline Solids

Volumn 343, Issue 1-3, 2004, Pages 33-38

Optoelectronic properties of fluorine-doped silicon nitride thin films

(2) Park, Young Bae a Rhee, Shi Woo b

a California Institute of Technology (United States)

b Pohang University of Science and Technology (POSTECH) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ETCHING; FLUORINE; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROGEN; MICROSTRUCTURE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMAS; THERMODYNAMIC STABILITY; THIN FILMS; ULTRAVIOLET SPECTROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

DEPOSITION RATES; ETCH RATES; INTERFACE STATES; PHOTON ENERGY;

SILICON NITRIDE;

EID: 4944226089 PISSN: 00223093 EISSN: None Source Type: Journal
DOI: 10.1016/j.jnoncrysol.2004.07.053 Document Type: Article

Times cited : (7)

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