메뉴 건너뛰기




Volumn 51, Issue 37, 2012, Pages 11931-11940

High efficiency multijunction photovoltaic development

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION TECHNOLOGY; DEVICE PERFORMANCE; ELEMENTAL SEMICONDUCTORS; III-V COMPOUND SEMICONDUCTOR; LATTICE-MATCHED; MATERIALS QUALITY; METAMORPHIC DEVICES; MULTI JUNCTION SOLAR CELLS; MULTI-JUNCTION CELLS; MULTIJUNCTION; PHOTOVOLTAIC; PHOTOVOLTAIC ENERGY CONVERSION; SOLAR CELL EFFICIENCIES; SUB-CELLS;

EID: 84866414235     PISSN: 08885885     EISSN: 15205045     Source Type: Journal    
DOI: 10.1021/ie3012616     Document Type: Article
Times cited : (19)

References (54)
  • 1
    • 0031617695 scopus 로고    scopus 로고
    • Current realities and future prospects for high-efficiency solar cells
    • Timmons, M. L. Current realities and future prospects for high-efficiency solar cells. 1998 IEEE Aerospace Conference; 1998; Vol. 1, pp 131-140.
    • (1998) 1998 IEEE Aerospace Conference , vol.1 , pp. 131-140
    • Timmons, M.L.1
  • 3
    • 0004260623 scopus 로고
    • Prentice-Hall: Englewood Cliffs, NJ
    • Green, M. A. Solar Cells; Prentice-Hall: Englewood Cliffs, NJ, 1982.
    • (1982) Solar Cells
    • Green, M.A.1
  • 7
    • 34250673243 scopus 로고    scopus 로고
    • Correlation of nitrogen related traps in InGaAsN with solar cell properties
    • Khan, A.; Kurtz, S. R.; Prasad, S.; Johnston, S. W.; Gou, J. Correlation of nitrogen related traps in InGaAsN with solar cell properties Appl. Phys. Lett. 2007, 90, 243509-3
    • (2007) Appl. Phys. Lett. , vol.90 , pp. 243509-243513
    • Khan, A.1    Kurtz, S.R.2    Prasad, S.3    Johnston, S.W.4    Gou, J.5
  • 11
    • 79955373872 scopus 로고    scopus 로고
    • Near 1 v open circuit voltage InAs/GaAs quantum dot solar cells
    • Bailey, C. G.; Forbes, D. V.; Raffaelle, R. P.; Hubbard, S. M. Near 1 V open circuit voltage InAs/GaAs quantum dot solar cells Appl. Phys. Lett. 2011, 98, 163105-3
    • (2011) Appl. Phys. Lett. , vol.98 , pp. 163105-163113
    • Bailey, C.G.1    Forbes, D.V.2    Raffaelle, R.P.3    Hubbard, S.M.4
  • 18
    • 84866387187 scopus 로고    scopus 로고
    • Sharp Develops Concentrator Solar Cell with World's Highest Conversion Efficiency of 43.5%
    • Sharp Develops Concentrator Solar Cell with World's Highest Conversion Efficiency of 43.5%, http://sharp-world.com/corporate/news/120531.html, 2012.
    • (2012)
  • 29
    • 21544472035 scopus 로고
    • Dislocations and strain relief in compositionally graded layers
    • Tersoff, J. Dislocations and strain relief in compositionally graded layers Appl. Phys. Lett. 1993, 62, 693-695
    • (1993) Appl. Phys. Lett. , vol.62 , pp. 693-695
    • Tersoff, J.1
  • 30
    • 77949372121 scopus 로고    scopus 로고
    • Comparison of compressive and tensile relaxed composition-graded GaAsP and (Al)InGaP substrates
    • Mori, M. J. Comparison of compressive and tensile relaxed composition-graded GaAsP and (Al)InGaP substrates J. Vac. Sci. Technol., A 2010, 29, 182
    • (2010) J. Vac. Sci. Technol., A , vol.29 , pp. 182
    • Mori, M.J.1
  • 32
    • 71649096778 scopus 로고    scopus 로고
    • High-quality metamorphic compositionally graded InGaAs buffers
    • Lee, K. E. High-quality metamorphic compositionally graded InGaAs buffers J. Cryst. Growth 2010, 312, 250-257
    • (2010) J. Cryst. Growth , vol.312 , pp. 250-257
    • Lee, K.E.1
  • 33
    • 0346955939 scopus 로고
    • Defects in epitaxial multilayers: I. Misfit dislocations
    • Matthews, J. E.; Blakeslee, A. E. Defects in epitaxial multilayers: I. Misfit dislocations J. Cryst. Growth 1974, 27, 118-125
    • (1974) J. Cryst. Growth , vol.27 , pp. 118-125
    • Matthews, J.E.1    Blakeslee, A.E.2
  • 46
    • 84866376385 scopus 로고    scopus 로고
    • Clean Technica, 19 April
    • Brown, N. Clean Technica, 19 April, 2011.
    • (2011)
    • Brown, N.1
  • 54
    • 34547270635 scopus 로고    scopus 로고
    • Strain-free routes to Ge/Si (100) structures for low temperature Si-based semiconductor applications
    • Sun, G.; Cheng, H.; Menendez, J.; Khurgin, J.; Soref, R. Strain-free routes to Ge/Si (100) structures for low temperature Si-based semiconductor applications Appl. Phys. Lett. 2007, 90, 251105
    • (2007) Appl. Phys. Lett. , vol.90 , pp. 251105
    • Sun, G.1    Cheng, H.2    Menendez, J.3    Khurgin, J.4    Soref, R.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.