Enhanced-depletion-width GaInNAs solar cells grown by molecular-beam epitaxy

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2005, Pages 603-606

  Ptak, Aaron J ^a   Friedman, Daniel J ^a   Kurtz, Sarah ^a   Kiehl, James ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTRINSIC BASE LAYERS; MINORITY-CARRIER COLLECTION; SOLAR CELL GROWTH;

CHARGE CARRIERS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS;

SOLAR CELLS;

EID: 27944497488     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)

1. S. R. Kurtz, D. Myers, and J. M. Olson, "Projected Performance of Three- and Four-Junction Devices using GaAs and GaInP," presented at 26th IEEE Photovoltaic Specialists Conference, Anaheim, 1997.
2. J. F. Geisz, D. J. Friedman, J. M. Olson, S. R. Kurtz, and B. M. Keyes, "Photocurrent of 1 eV GaInNAs lattice-matched to GaAs," J Cryst Growth, vol. 195, pp. 401-408, 1998.
3. S. R. Kurtz, A. A. Allerman, C. H. Seager, R. M. Sieg, and E. D. Jones, "Minority carrier diffusion, defects, and localization in InGaAsN, with 2% nitrogen," Appl. Phys. Lett., vol. 77, pp. 400-402, 2000.
4. D. J. Friedman and S. Kurtz, "Breakeven Criteria for the GaInNAs junction in GaInP/GaAs/GaInNAs/Ge four-junction solar cells," Prog. Photovolt., vol. 10, pp. 331-344, 2002.
5. S. Kurtz, R. Reedy, B. Keyes, G. D. Barber, J. F. Geisz, D. J. Friedman, W. E. McMahon, and J. M. Olson, "Evaluation of NF3 versus dimethylhydrazine as N sources for GaAsN," J Cryst Growth, vol. 234, pp. 323-326, 2002.
6. A. Janotti, S. H. Wei, S. B. Zhang, S. Kurtz, and C. G. VandeWalle, "Interactions between nitrogen, hydrogen, and gallium vacancies in GaAs1-xNx alloys art. no. 161201," Phys Rev B, vol. 6716, pp. 1201, 2003.
7. A. J. Ptak, S. Kurtz, K. G. Lynn, and M. H. Weber, "Positron annihilation spectroscopy study of vacancies in GaInNAs," J vac Sci Technol B, vol. 22, pp. 1584, 2004.
8. N. Y. Li, P. R. Sharps, M. Stan, F. Newman, J. S. Hills, H. Q. Hou, J. M. Gee, and D. J. Aiken, "Development of 1.25 eV InGaAsN for Triple Junction Solar Cells," presented at 28th IEEE Photovoltaic Specialists Conference, Anchorage, Alaska, 2000.
9. S. Kurtz, J. F. Geisz,.D. J. Friedman, J. M. Olson, A. Duda, N. H. Karam, R. R. King, J. H. Ermer, and D. E. Joslin, "Modeling of Electron Diffusion Length in GaInAsN Solar Cells," presented at 28th IEEE Photovoltaic Specialists Conference, Anchorage, Alaska, 2000.
10. J. Kiehl and K. Emery, "Characterization of Photovoltaic Concentrators," presented at DOE Solar Program Review Meeting, Denver, 2004.
11. st IEEE Photovoltaic Specialists Conference, 2005.
12. st IEEE Photovoltaic Specialists Conference, 2005.