Enhanced seebeck coefficients of thermoelectric Bi 2Te 3 nanowires as a result of an optimized annealing process

Journal of Physical Chemistry C

Volumn 116, Issue 36, 2012, Pages 19512-19516

  Lee, Jongmin ^a   Kim, Jinwon ^a   Moon, Wonjin ^b   Berger, Andreas ^c   Lee, Jaeyoung ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Korea Basic Science Institute (KBSI)   (South Korea)

^c MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING PROCESS; ANNEALING TEMPERATURES; CHEMICAL COMPOSITIONS; DEFECT CONCENTRATIONS; EVAPORATION PRESSURE; HIGH ASPECT RATIO; HIGH TEMPERATURE; LOW MELTING POINT; NANO-STRUCTURED; THERMOELECTRIC EFFICIENCY;

ANNEALING; ASPECT RATIO; CRYSTAL DEFECTS; EDGE DISLOCATIONS; EVAPORATION; NANOWIRES; OPTIMIZATION; PHASE TRANSITIONS; SEEBECK COEFFICIENT; TELLURIUM; TELLURIUM COMPOUNDS;

BISMUTH;

EID: 84866391710     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp3030039     Document Type: Article

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