Size effects in vapor-solid-solid Ge nanowire growth with a Ni-based catalyst

Journal of Applied Physics

Volumn 112, Issue 5, 2012, Pages

  Thombare, S V ^a   Marshall, A F ^b   McIntyre, P C ^a,b  

^a Stanford University   (United States)

^b STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BINARY SYSTEMS; EPITAXIAL INTERFACES; HIGH DENSITY; LOW ENERGIES; LOW TEMPERATURES; NANOWIRE GROWTH; NI-BASED CATALYST; SIZE EFFECTS; SLOW GROWTH; SOLID-SOLID;

CATALYSTS; CRYSTAL DEFECTS; EPITAXIAL GROWTH; GERMANIUM; MORPHOLOGY; NICKEL COMPOUNDS; VAPORS; WIRE;

NANOWIRES;

EID: 84866390854     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4749797     Document Type: Conference Paper

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