Structure characterization of hard materials by precession electron diffraction and automatic diffraction tomography: 6H-SiC semiconductor and Ni 1+xTe 1embedded nanodomains

Semiconductor Science and Technology

Volumn 27, Issue 10, 2012, Pages

  Sarakinou, E ^a   Mugnaioli, E ^b   Lioutas, Ch B ^a   Vouroutzis, N ^a   Frangis, N ^a   Kolb, U ^b   Nikolopoulos, S ^c  

^a ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^b JOHANNES GUTENBERG UNIVERSITY   (Germany)

^c NanoMEGAS   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

3D DIFFRACTION; AB INITIO STRUCTURE; CELL PARAMETER; DIFFRACTION TECHNIQUES; DIFFRACTION TOMOGRAPHY; DIRECT METHOD; ELECTRON DIFFRACTION DATA; HARD MATERIAL; NANO DOMAIN; SPACE GROUPS; STRUCTURE CHARACTERIZATION;

ELECTRON DIFFRACTION; SILICON CARBIDE; TOMOGRAPHY;

SEMICONDUCTING TELLURIUM;

EID: 84866340512     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/27/10/105003     Document Type: Article

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