Evaluation of diffusion barrier between lead-free solder systems and thermoelectric materials

Journal of Electronic Materials

Volumn 41, Issue 1, 2012, Pages 153-158

  Lin, T Y ^a   Liao, C N ^b   Wu, Albert T ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

diffusion barrier; Pb free solder; Thermoelectric

Indexed keywords

ANNEALING TIME; BISMUTH TELLURIDE; EFFECTIVE DIFFUSION; ELECTROLESS; LEAD FREE SOLDERS; LEAD-FREE SOLDER ALLOY; P-TYPE; PB FREE SOLDERS; SN-3.5AG; THERMOELECTRIC; THERMOELECTRIC MATERIAL; THERMOELECTRIC MODULES;

ACTIVATION ENERGY; ANTIMONY COMPOUNDS; BISMUTH; BISMUTH COMPOUNDS; GROWTH KINETICS; INTERMETALLICS; LEAD; LEAD COMPOUNDS; MECHANICAL PROPERTIES; PHASE STABILITY; PHOSPHORUS; SILVER; SILVER ALLOYS; SOLDERING ALLOYS; THERMOELECTRIC EQUIPMENT; THERMOELECTRICITY; TIN;

DIFFUSION BARRIERS;

EID: 84855440056     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-011-1740-8     Document Type: Article

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