Analytical field-effect method for extraction of subgap states in thin-film transistors

IEEE Electron Device Letters

Volumn 33, Issue 7, 2012, Pages 1006-1008

  Lee, Sungsik ^a   Ahnood, Arman ^a   Sambandan, Sanjiv ^b   Madan, Arun ^c   Nathan, Arokia ^d  

^a UNIVERSITY COLLEGE LONDON   (United Kingdom)

^b INDIAN INSTITUTE OF SCIENCE   (India)

^c MVSystems Inc   (United States)

^d UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

Amorphous semiconductor thin film transistors (TFTs); density of subgap states (subgap DOS); field effect mobility

Indexed keywords

CLOSED FORM; DEVICE PERFORMANCE; FIELD-EFFECT; FIELD-EFFECT MOBILITIES; GATE VOLTAGES; PHYSICALLY BASED; SUBTHRESHOLD CHARACTERISTICS; THIN-FILM TRANSISTOR (TFTS);

AMORPHOUS SEMICONDUCTORS; CIRCUIT SIMULATION; SURFACE POTENTIAL;

THIN FILM TRANSISTORS;

EID: 84862860750     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2193657     Document Type: Article

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