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Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 29, Issue 1, 2011, Pages 0110271-0110277

Nanoscale depth-resolved electronic properties of SiO2/SiO x/SiO2 for device-tolerant electronics

(6) Katz, E J a Zhang, Z a Hughes, H L b Chung, K B c Lucovsky, G c Brillson, L J a,d

a The Ohio State University (United States)

b NAVAL RESEARCH LABORATORY (United States)

c NORTH CAROLINA STATE UNIVERSITY (United States)

d OHIO STATE UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; ELECTRONIC PROPERTIES; IONIZING RADIATION; NANOSTRUCTURED MATERIALS; SPATIAL DISTRIBUTION;

CARRIER TRAPPING; CATHODOLUMINESCENCE SPECTROSCOPY; CMOS TRANSISTORS; DEPTH-RESOLVED; ENERGY LEVEL; GRAIN FORMATION; HOLE TRAPPING; MATRIX; NANO SCALE; NANOCRYSTALLINE GRAINS; NANOCRYSTALLINE SI; OXIDE LAYER; OXIDE STRUCTURES; PROTON TRANSPORT;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79551639021 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3543712 Document Type: Conference Paper

Times cited : (3)

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