Electron-electron interactions based metal-insulator transition in Ga doped ZnO thin films

Electronic Materials Letters

Volumn 8, Issue 4, 2012, Pages 457-462

  Naidu, R V Muniswami ^a   Subrahmanyam, A ^a   Verger, A ^b   Jain, M K ^a   Rao, S V N Bhaskara ^c   Jha, S N ^c   Phase, D M ^d  

^a INDIAN INSTITUTE OF TECHNOLOGY MADRAS   (India)

^b SAINT GOBAIN RECHERCHE   (France)

^c BHABHA ATOMIC RESEARCH CENTRE   (India)

^d UGC DAE CONSORTIUM FOR SCIENTIFIC RESEARCH   (India)

Author keywords

electron electron interaction; meat insulator transition; thin films; ZnO

Indexed keywords

ABSORPTION EDGES; BLUE SHIFT; CHARGE-CARRIER TRANSPORT; DOPED ZNO THIN FILMS; DOPING EFFECTS; EFFECT OF DOPING; FERMI EDGE; GA-DOPED; GA-DOPED ZNO; LOW TEMPERATURES; MEAT-INSULATOR TRANSITION; METAL-TO-INSULATOR TRANSITIONS; PULSED DC MAGNETRON SPUTTERING; TEMPERATURE-DEPENDENT RESISTIVITY; VALANCE BANDS; VISIBLE REGION; ZNO; ZNO THIN FILM;

ELECTRON-ELECTRON INTERACTIONS; FERMI LEVEL; GALLIUM; METAL INSULATOR TRANSITION; METALLIC COMPOUNDS; OPTICAL FILMS; SEMICONDUCTOR DOPING; SEMICONDUCTOR INSULATOR BOUNDARIES; TEMPERATURE; THIN FILMS; ZINC OXIDE;

METALLIC FILMS;

EID: 84865809916     PISSN: 17388090     EISSN: 20936788     Source Type: Journal    
DOI: 10.1007/s13391-012-1086-2     Document Type: Article

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