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Volumn 358, Issue 17, 2012, Pages 2023-2026
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Voids in hydrogenated amorphous silicon materials
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Author keywords
Amorphous silicon; Doping; Hydrogen; Microstructure; Voids
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Indexed keywords
A-SI:H;
CRYSTALLINE SI;
CRYSTALLINE SILICONS;
DIVACANCIES;
DOPED MATERIALS;
HOT WIRES;
HYDROGEN CONCENTRATION;
HYDROGEN CONTENTS;
HYDROGENATED AMORPHOUS SILICON (A-SI:H);
IMPLANTED HELIUM;
SUBSTRATE TEMPERATURE;
VOIDS;
AMORPHOUS SILICON;
CRYSTALLINE MATERIALS;
DOPING (ADDITIVES);
HELIUM;
HYDROGEN;
HYDROGENATION;
MICROSTRUCTURE;
SILICON;
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EID: 84865771286
PISSN: 00223093
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jnoncrysol.2011.09.030 Document Type: Conference Paper |
Times cited : (34)
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References (19)
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