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Volumn 358, Issue 17, 2012, Pages 2023-2026

Voids in hydrogenated amorphous silicon materials

Author keywords

Amorphous silicon; Doping; Hydrogen; Microstructure; Voids

Indexed keywords

A-SI:H; CRYSTALLINE SI; CRYSTALLINE SILICONS; DIVACANCIES; DOPED MATERIALS; HOT WIRES; HYDROGEN CONCENTRATION; HYDROGEN CONTENTS; HYDROGENATED AMORPHOUS SILICON (A-SI:H); IMPLANTED HELIUM; SUBSTRATE TEMPERATURE; VOIDS;

EID: 84865771286     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2011.09.030     Document Type: Conference Paper
Times cited : (34)

References (19)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.