Rare-earth doped III-nitride semiconductors for semiconductor spintronics

Journal of Luminescence

Volumn 132, Issue 12, 2012, Pages 3136-3140

  Asahi, Hajime ^a   Hasegawa, Shigehiko ^a   Zhou, Yi Kai ^a   Emura, Shuichi ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

Ferromagnetism; InGaN based diluted magnetic semiconductor; Molecular beam epitaxy; Photoluminescence; Rare earth doping

Indexed keywords

CO-DOPING; DILUTED MAGNETIC SEMICONDUCTORS; ELECTRON CARRIER; GAN LAYERS; III-NITRIDE SEMICONDUCTORS; PEAK WAVELENGTH; PHOTOLUMINESCENCE EMISSION; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; RARE EARTH DOPED; RARE-EARTH DOPING; RED-SHIFTED; ROOM TEMPERATURE; SEMICONDUCTOR SPINTRONICS; SI-DOPING; SUPERLATTICE STRUCTURES; WIDE BAND GAP;

EPITAXIAL GROWTH; FERROMAGNETISM; GALLIUM NITRIDE; MAGNETIC SEMICONDUCTORS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS; SILICON;

SATURATION MAGNETIZATION;

EID: 84865686020     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jlumin.2011.11.033     Document Type: Conference Paper

References (18)

1. M. Holub, J. Shin, S. Chakrabarti, and P. Bhattacharya Appl. Phys. Lett. 87 2005 091108
2. N. Teraguchi, A. Suzuki, Y. Nanishi, Y.K. Zhou, M. Hashimoto, and H. Asahi Solid State Commun. 122 2002 651
3. M. Hashimoto, K. Araki, K. Sato, H. Asahi, H. Katayama-Yoshida, Extended Abstracts of the 8th Symposium on the Physics and Application of Spin-related Phenomena in Semiconductors, Sendai, Japan, 2002, pp.165-168.
4. G.M. Dalpian, and S.H. Wei Phys. Rev. B 72 2005 115201
5. Y. Gohda, and A. Oshiyama Phys. Rev. B 78 2008 161201
6. L. Liu, P.Y. Yu, Z. Ma, and S.S. Mao Phys. Rev. Lett. 100 2008 127203
7. V.I. Litvinov, and V.K. Dugaev Appl. Phys. Lett. 94 2009 212506
8. S. Dhar, L. Pérez, O. Brandt, A. Trampert, K.H. Ploog, J. Keller, and B. Beschoten Phys. Rev. B 72 2005 245203
9. S.W. Choi, Y.K. Zhou, M.S. Kim, S. Kimura, S. Emura, S. Hasegawa, and H. Asahi Phys. Status Solidi (a) 203 2006 2774
10. J.K. Hite, R.M. Frazier, R. Davies, G.T. Thaler, C.R. Abernathy, and S.J. Pearton Appl. Phys. Lett. 89 2006 092119
11. Y.K. Zhou, S.W. Choi, S. Kimura, S. Emura, S. Hasegawa, and H. Asahi Thin Solid Films 518 2010 5659
12. I.H. Hung, Y.H. Lai, Z.C. Feng, S. Gupta, T. Zaidi, I. Ferguson, and W. Lu Proc. SPIE 7784 2010 77840H
13. S.Y. Han, J.K. Hite, G.T. Thaler, R.M. Frazier, C.R. Abernathy, S.J. Pearton, H.K. Choi, W.O. Lee, Y.D. Park, and J.M. Zavada Appl. Phys. Lett. 88 2006 042102
14. J.K. Hite, R.M. Frazier, R.P. Davies, G.T. Thaler, C.R. Abernathy, S.J. Pearton, J.M. Zavada, E. Brown, and U. Hömmerich J. Electron. Mater. 36 2007 391
15. J. Hejtmánek, K. Knížek, M. Maryško, Z. Jirák, D. Sedmidubský, Z. Sofer, V. Peřina, H. Hardtdegen, and C. Buchal J. Appl. Phys. 103 2008 07D107
16. S.N.M. Tawil, R. Kakimi, D. Krishnamurthy, M. Ishimaru, S. Emura, H. Tambo, S. Hasegawa, and H. Asahi Phys. Stat. Sol. Rap. Res. Lett. 4 2010 308
17. S.N.M. Tawil, D. Krishnamurthy, R. Kakimi, S. Emura, S. Hasegawa, and H. Asahi J. Cryst. Growth 323 2011 351
18. S.N.M. Tawil, D. Krishnamurthy, R. Kakimi, M. Ishimaru, S. Emura, S. Hasegawa, and H. Asahi Phys. Status Solidi C 8 2011 491