Effect of growth conditions on the magnetic characteristics of GaGdN

Applied Physics Letters

Volumn 89, Issue 9, 2006, Pages

  Hite, J K ^a   Frazier, R M ^a   Davies, R ^a   Thaler, G T ^a   Abernathy, C R ^a   Pearton, S J ^a   Zavada, J M ^b  

^a University of Florida   (United States)

^b U S ARMY RESEARCH OFFICE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL QUALITY; GAGDN; GAS SOURCE MOLECULAR BEAM EPITAXY; GD-DOPED FILMS;

GADOLINIUM COMPOUNDS; MAGNETIZATION; MOLECULAR BEAM EPITAXY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; X RAY DIFFRACTION ANALYSIS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 33748284834     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2337082     Document Type: Article

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