Optical, structural properties and experimental procedures of GaGdN grown by metalorganic chemical vapor deposition

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7784, Issue , 2010, Pages

  Hung, I Hsiang ^a   Lai, Yu Hsiang ^a   Feng, Zhe Chuan ^a   Gupta, Shalini ^b   Zaidi, Tahir ^b   Ferguson, Ian ^c   Lu, Weijie ^d  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^c University of North Carolina at Charlotte   (United States)

^d FISK UNIVERSITY   (United States)

Author keywords

Dilute magnetic semiconductor; GaN sapphire; Metal organic chemical vapor deposition; Optical reflection; Photoluminescence; Raman scattering

Indexed keywords

4F-ELECTRONS; DILUTE MAGNETIC SEMICONDUCTORS; DIRECT COUPLING; ELECTRONIC TRANSITION; EXPERIMENTAL PROCEDURE; GAN/SAPPHIRE; INFRARED-TO-VISIBLE; MAGNETIC ELEMENTS; METAL ORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL REFLECTION; OPTOELECTRONIC APPLICATIONS; RE ELEMENTS; SPINTRONICS APPLICATION;

INDUSTRIAL CHEMICALS; LIGHTING; MAGNETIC MOMENTS; MAGNETIC SEMICONDUCTORS; ORGANIC CHEMICALS; ORGANOMETALLICS; PHOTOLUMINESCENCE; RAMAN SCATTERING; SEMICONDUCTING ANTIMONY; TRANSITION METALS; VAPOR DEPOSITION;

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 77958000335     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.859107     Document Type: Conference Paper

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