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Physica Status Solidi - Rapid Research Letters

Volumn 4, Issue 11, 2010, Pages 308-310

Characterization of InGaGdN layers prepared by molecular beam epitaxy

(7) Tawil, Siti Nooraya Mohd a,b Kakimi, Rina a Krishnamurthy, Daivasigamani a Emura, Shuichi a Tambo, Hiroyuki a Hasegawa, Shigehiko a Asahi, Hajime a

a OSAKA UNIVERSITY (Japan)

b UNIVERSITI TUN HUSSEIN ONN MALAYSIA (Malaysia)

Author keywords

Molecular beam epitaxy; Nitride semiconductors; Thin films; XAFS

Indexed keywords

CATION SITES; CO-DOPING; DILUTED MAGNETIC SEMICONDUCTORS; FIELD CURVES; LOCAL STRUCTURE; NITRIDE SEMICONDUCTORS; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; ROOM TEMPERATURE; SHALLOW DONORS; SPINTRONICS; SUPERCONDUCTING QUANTUM INTERFERENCE DEVICE; X RAY ABSORPTION FINE STRUCTURES; XAFS;

CRYSTAL ATOMIC STRUCTURE; EPITAXIAL GROWTH; FILM PREPARATION; GADOLINIUM; MAGNETIC SEMICONDUCTORS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NITRIDES; SEMICONDUCTOR DOPING; SQUIDS; THIN FILMS;

SATURATION MAGNETIZATION;

EID: 78349241787 PISSN: 18626254 EISSN: 18626270 Source Type: Journal
DOI: 10.1002/pssr.201004273 Document Type: Letter

Times cited : (11)

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