Influence of Si-doping on the characteristics of InGaGdN/GaN MQWs grown by MBE

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 8, Issue 2, 2011, Pages 491-493

  Tawil, Siti Nooraya Mohd ^a,b   Krishnamurthy, Daivasigamani ^a   Kakimi, Rina ^a   Ishimaru, Manabu ^a   Emura, Shuichi ^a   Hasegawa, Shigehiko ^a   Asahi, Hajime ^a  

^a OSAKA UNIVERSITY   (Japan)

^b UNIVERSITI TUN HUSSEIN ONN MALAYSIA   (Malaysia)

Author keywords

InGaGdN; Molecular beam epitay; Multiple quantum well; Si doping

Indexed keywords

BARRIER LAYERS; CELL TEMPERATURE; DOPED BARRIERS; INGAGDN; INTERFACIAL QUALITIES; MOLECULAR-BEAM EPITAY; MULTIPLE QUANTUM WELLS; MULTIPLE-QUANTUM WELL; SI-DOPING; SUPERCONDUCTING QUANTUM INTERFERENCE DEVICE;

DOPING (ADDITIVES); GALLIUM NITRIDE; MAGNETIC PROPERTIES; MODULATORS; MOLECULAR BEAMS; SATURATION MAGNETIZATION; SEMICONDUCTING INDIUM COMPOUNDS; SILICON; SQUIDS; X RAY DIFFRACTION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 79951704675     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201000484     Document Type: Article

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