Vapor-liquid-solid growth of Si nanowires: A kinetic analysis

Journal of Applied Physics

Volumn 112, Issue 2, 2012, Pages

  Shakthivel, Dhayalan ^a   Raghavan, Srinivasan ^a  

^a INDIAN INSTITUTE OF SCIENCE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

GIBBS-THOMPSON EFFECTS; INJECTION RATES; KINETIC ANALYSIS; LIQUID CATALYST; LIQUID-SOLID INTERFACES; PRECURSOR DECOMPOSITION; PRESSURE AND TEMPERATURE; RATE-LIMITING STEPS; REVERSE REACTIONS; SI ATOMS; SI NANOWIRE; STEADY STATE; STEADY-STATE KINETICS; SURFACE CRACKING; TRIPLE PHASE BOUNDARY; VAPOR-LIQUID-SOLID GROWTH; WIRE GROWTH;

ACTIVATION ENERGY; DROPS; GROWTH RATE; NANOWIRES; NUCLEATION; PHASE INTERFACES; REACTION RATES; SILICON; SURFACE DEFECTS; VAPORS; WIRE PRODUCTS;

LIQUIDS;

EID: 84865517095     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4737597     Document Type: Article

References (37)

1. Y. L. Fang, J. Xiang, and C. M. Lieber, Mater. Today 9, 18 (2006). 10.1016/S1369-7021(06)71650-9
2. R. S. Wagner, W. C. Ellis, K. A. Jackson, and S. M. Arnold, J. Appl. Phys. 35, 2993 (1964). 10.1063/1.1713143
3. E. I. Givargizov, J. Cryst. Growth 31, 20 (1975). 10.1016/0022-0248(75) 90105-0
4. G. A. Bootsma and H. J. Gassen, J. Cryst. Growth 10, 223 (1971). 10.1016/0022-0248(71)90188-6
5. K. K. Lew and J. M. Redwing, J. Cryst. Growth 254, 14 (2003). 10.1016/S0022-0248(03)01146-1
6. V. Schmidt, S. Senz, and U. Gosele, Phys. Rev. B 75, 045335 (2007). 10.1103/PhysRevB.75.045335
7. V. G. Dubrovskii and N. V. Sibirev, J. Cryst. Growth 304, 504 (2007). 10.1016/j.jcrysgro.2007.03.034
8. K. J. Laidler, Chemical Kinetics (Pearson Education, Delhi, 2008).
9. S. Y. Choi, W. Y. Fung, and W. Lu, Appl. Phys. Lett. 98, 033108 (2011). 10.1063/1.3544933
10. S. A. Dayeh and S. T. Picraux, Nano Lett. 10, 4032 (2010). 10.1021/nl1019722
11. I. V. Markov, Crystal Growth for Beginners (World Scientific, Singapore, 1998).
12. V. G. Dubrovskii, N. V. Sibirev, G. E. Cirlin, J. C. Harmand, and V. M. Ustinov, Phys. Rev. E 73, 021603 (2006). 10.1103/PhysRevE.73.021603
13. V. G. Dubrovskii, N. V. Sibirev, G. E. Cirlin, I. P. Soshnikov, W. H. Chen, R. Larde, E. Cadel, P. Pareige, T. Xu, B. Grandidier, J.-P. Nys, D. Stievenard, M. Moewe, L. C. Chuang, and C. C. Hasnain, Phys. Rev. B 79, 205316 (2009). 10.1103/PhysRevB.79.205316
14. V. Schmidt, J. V. Wittemann, and U. Gosele, Chem. Rev. 110, 361 (2010). 10.1021/cr900141g
15. B. A. Wacaser, K. A. Dick, J. Johansson, M. T. Borgstrom, K. Deppert, and L. Samuelson, Adv. Mater. 21, 153 (2009). 10.1002/adma.200800440
16. S. Hoffman, R. Sharma, C. T. Wirth, F. Cervantes-Sodi, C. Ducati, T. Kasama, R. E. Dunin-Borokowski, J. Drucker, P. Bennett, and J. Robertson, Nature Mater. 7, 372 (2008). 10.1038/nmat2140
17. S. H. Oh, M. F. Chisholm, Y. Kauffmann, W. D. Kaplan, W. Luo, M. Ruhle, and C. Scheu, Science 330, 489 (2010). 10.1126/science.1190596
18. F. Glas, J. C. Harmand, and G. Patriarche, Phys. Rev. Lett. 104, 135501 (2010). 10.1103/PhysRevLett.104.135501
19. C.-Y. Wen, J. Tersoff, M. C. Reuter, E. A. Stach, and F. M. Ross, Phys. Rev. Lett. 105, 195502 (2010). 10.1103/PhysRevLett.105.195502
20. C.-Y. Wen, J. Tersoff, K. Hillerich, M. C. Reuter, J. H. Park, S. Kodambaka, E. A. Stach, and F. M. Ross, Phys. Rev. Lett. 107, 025503 (2011). 10.1103/PhysRevLett.107.025503
21. S. Kodambaka, J. Tersoff, M. C. Reuter, and F. M. Ross, Phys. Rev. Lett. 96, 096105 (2006). 10.1103/PhysRevLett.96.096105
22. F. Millot, V. Sarou-Kanian, J.-C. Rifflet, and B. Vinet, Mater. Sci. Eng. A 495, 8 (2008). 10.1016/j.msea.2007.10.108
23. R. J. Jaccodine, J. Electrochem. Soc. 110, 524 (1963). 10.1149/1.2425806
24. T. I. Kamins, R. S. Williams, D. P. Basile, T. Hesjedal, and J. S. Harris, J. Appl. Phys. 89, 1008 (2001). 10.1063/1.1335640
25. Y. Ke, X. Weng, J. M. Redwing, C. M. Eichfeld, T. R. Swisher, S. E. Mohney, and Y. M. Habib, Nano Lett. 9, 4494 (2009). 10.1021/nl902808r
26. S. T. Boles, E. A. Fitzgerald, C. V. Thompson, C. K. F. Ho, and K. L. Pey, J. Appl. Phys. 106, 044311 (2009). 10.1063/1.3207821
27. J. Johansson, B. A. Wacaser, K. A. Dick, and W. Siefert, Nanotechnology 17, S355 (2006). 10.1088/0957-4484/17/11/S21
28. Y. K. Shchipalov, Glass Ceram. 57, 374 (2000). 10.1023/A:1010900903019
29. J. P. Hirth and G. M. Pound, Condensation and Evaporation (Pergamon, Oxford, 1963).
30. T. Tomooka, Y. Shoji, and T. Matsui, J. Mass. Spectrom. Soc. Jpn. 47, 49 (1999). 10.5702/massspec.47.49
31. H. Zhao, S. Zhou, Z. Hasanali, and D. Wang, J. Phys. Chem. C Lett. 112, 5695 (2008). 10.1021/jp8000256
32. L. Zambov, J. Cryst. Growth 125, 164 (1992). 10.1016/0022-0248(92)90331-C
33. Kodambaka used disilane. However, literature data shows that the deposition kinetics of Si films by Silane and Disilane are similar. Also, the growth rates of Si nanowires are the same irrespective of whether silane or disilane are used.
34. K. D. Allen and H. H. Sawin, J. Electrochem. Soc. 133, 421 (1986). 10.1149/1.2108590
35. D. K. Pal, M. K. Kowar, A. N. Daw, and P. Roy, Microelectron. J. 26, 507 (1995). 10.1016/0026-2692(95)00012-7
36. T. Y. Tan, N. Li, and U. Gosele, Appl. Phys. Lett. 83, 1199 (2003). 10.1063/1.1599984
37. D. All the used equations have been listed.