Properties of nanocrystalline GaN films deposited by reactive sputtering

Diamond and Related Materials

Volumn 12, Issue 8, 2003, Pages 1417-1421

  Knox Davies, E C ^a   Silva, S R P ^a   Shannon, J M ^a  

^a UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

Gallium nitride; Optical properties characterisation; Sputtering; Vibrational properties characterisation

Indexed keywords

ELECTRIC POTENTIAL; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GALLIUM NITRIDE; SPUTTERING; THIN FILMS;

REACTIVE SPUTTERING;

NANOSTRUCTURED MATERIALS;

DIAMOND;

EID: 0041621800     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(03)00171-7     Document Type: Article

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