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Volumn 358, Issue 1, 2012, Pages 5-11

Local design of the hot-zone in an industrial seeded directional solidification furnace for quasi-single crystalline silicon ingots

Author keywords

A1. Computer simulation; A1. Directional solidification; A1. Heat transfer; B3. Solar cells; Quasi single crystal growth

Indexed keywords

ARGON FLOW; BLOCK DESIGNS; BULK CRYSTAL GROWTH; COMPREHENSIVE PARAMETERS; CONFIGURATION DESIGNS; CRYSTALLINE SILICONS; DIRECTIONAL SOLIDIFICATION FURNACE; GLOBAL MODELS; MELT CONVECTION; MELT FLOW; MELTING PROCESS; RECIRCULATIONS; SEED CRYSTAL; SILICON INGOT; SOLIDIFICATION INTERFACE; SOLIDIFICATION PROCESS; THERMAL CONDUCTION; THERMAL FIELD;

EID: 84865280970     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2012.07.039     Document Type: Conference Paper
Times cited : (70)

References (16)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.