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Volumn 358, Issue 1, 2012, Pages 5-11
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Local design of the hot-zone in an industrial seeded directional solidification furnace for quasi-single crystalline silicon ingots
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Author keywords
A1. Computer simulation; A1. Directional solidification; A1. Heat transfer; B3. Solar cells; Quasi single crystal growth
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Indexed keywords
ARGON FLOW;
BLOCK DESIGNS;
BULK CRYSTAL GROWTH;
COMPREHENSIVE PARAMETERS;
CONFIGURATION DESIGNS;
CRYSTALLINE SILICONS;
DIRECTIONAL SOLIDIFICATION FURNACE;
GLOBAL MODELS;
MELT CONVECTION;
MELT FLOW;
MELTING PROCESS;
RECIRCULATIONS;
SEED CRYSTAL;
SILICON INGOT;
SOLIDIFICATION INTERFACE;
SOLIDIFICATION PROCESS;
THERMAL CONDUCTION;
THERMAL FIELD;
COMPUTER SIMULATION;
CRYSTAL GROWTH;
CRYSTALLINE MATERIALS;
DESIGN;
ENERGY UTILIZATION;
INGOTS;
SILICON WAFERS;
SOLIDIFICATION;
THERMAL INSULATION;
MONOCRYSTALLINE SILICON;
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EID: 84865280970
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2012.07.039 Document Type: Conference Paper |
Times cited : (70)
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References (16)
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