Influence of an insulation partition on a seeded directional solidification process for quasi-single crystalline silicon ingot for high-efficiency solar cells

Solar Energy Materials and Solar Cells

Volumn 100, Issue , 2012, Pages 231-238

  Ma, Wencheng ^a   Zhong, Genxiang ^a,b   Sun, Lei ^a   Yu, Qinghua ^a   Huang, Xinming ^b   Liu, Lijun ^a  

^a Xi an Jiaotong University)   (China)

^b Donghai JA Solar Technology Co Ltd   (China)

Author keywords

Crystal growth design; Quasi single crystalline silicon; Seeded solidification; Solar cells; Thermal stress; Transient global model

Indexed keywords

AXIAL TEMPERATURE GRADIENTS; CONVENTIONAL FURNACE; CRYSTALLINE SILICONS; EXPERIMENTAL MEASUREMENTS; GLOBAL MODELS; HEATING POWER; HIGH-EFFICIENCY SOLAR CELLS; QUASI-SINGLE CRYSTALLINE SILICON; SHAPE CHANGE; SILICON CRYSTAL; SILICON INGOT; SILICON MELTS; SOLIDIFICATION PROCESS; THERMAL STRESS FIELD; VELOCITY FIELD;

CONVERSION EFFICIENCY; CRYSTAL GROWTH; CRYSTALLINE MATERIALS; INGOTS; INSULATION; OPEN CIRCUIT VOLTAGE; SOLAR CELLS; SOLIDIFICATION; THERMAL STRESS; VELOCITY;

MONOCRYSTALLINE SILICON;

EID: 84862820171     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2012.01.024     Document Type: Article

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