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Volumn 112, Issue 3, 2012, Pages

Resistive switching and threshold switching behaviors in La 0.1Bi 0.9Fe 1-xCo xO 3 ceramics

Author keywords

[No Author keywords available]

Indexed keywords

CHARGED DEFECTS; COBALT DOPANTS; COBALT DOPING; CURRENT INCREASE; ELECTRICAL CONDUCTIVITY; ELEVATED TEMPERATURE; OXYGEN VACANCY CONCENTRATION; RESISTIVE SWITCHING; ROOM TEMPERATURE; THRESHOLD SWITCHING;

EID: 84865235210     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4743013     Document Type: Article
Times cited : (21)

References (21)
  • 9
    • 77957693621 scopus 로고    scopus 로고
    • 10.1016/j.tsf.2010.08.004
    • S.-W. Chen and J.-M. Wu, Thin Solid Films 519, 499 (2010). 10.1016/j.tsf.2010.08.004
    • (2010) Thin Solid Films , vol.519 , pp. 499
    • Chen, S.-W.1    Wu, J.-M.2
  • 19
    • 36049053305 scopus 로고
    • 10.1103/PhysRevLett.21.1450
    • S. R. Ovshinsky, Phys. Rev. Lett. 21, 1450 (1968). 10.1103/PhysRevLett. 21.1450
    • (1968) Phys. Rev. Lett. , vol.21 , pp. 1450
    • Ovshinsky, S.R.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.