Electrical properties of homogeneous Cu(In,Ga)S2 films with varied gallium content

Thin Solid Films

Volumn 515, Issue 15 SPEC. ISS., 2007, Pages 6260-6264

  Kaigawa, R ^a   Ohyama, A ^a   Wada, T ^a   Klenk, R ^b  

^a RYUKOKU UNIVERSITY   (Japan)

^b HAHN MEITNER INSTITUT   (Germany)

Author keywords

Cu(In,Ga)S2; Electrical properties; Ga content; Micro structural characterization; Two stage evaporation

Indexed keywords

ACTIVATION ENERGY; CARRIER CONCENTRATION; EVAPORATION; MICROSTRUCTURE; SOLAR CELLS; SYNTHESIS (CHEMICAL);

MICRO-STRUCTURAL CHARACTERIZATION; MULTI-SOURCE EVAPORATION; TWO-STAGE EVAPORATION;

THIN FILMS;

EID: 34247355401     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.12.101     Document Type: Article

References (12)

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