Role of interface charges on high-k based poly-Si and metal gate nano-scale mosfets

Journal of Nano- and Electronic Physics

Volumn 3, Issue 1 PART5, 2011, Pages 937-941

  Shashank, N ^a   Singh, Vikram ^a   Taube, W R ^a   Nahar, R K ^a  

^a CENTRAL ELECTRONICS ENGINEERING RESEARCH INSTITUTE   (India)

Author keywords

High K; Interface charges; Metal gates; Mobility; Mosfet

Indexed keywords

EID: 84865147808     PISSN: 20776772     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (11)

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