Optical and defect properties of hydrothermal ZnO with low lithium contamination

Applied Physics Letters

Volumn 101, Issue 6, 2012, Pages

  Heinhold, R ^a   Kim, H S ^a   Schmidt, F ^b   Von Wenckstern, H ^b   Grundmann, M ^b   Mendelsberg, R J ^c   Reeves, R J ^a   Durbin, S M ^d   Allen, M W ^a  

^a UNIVERSITY OF CANTERBURY   (New Zealand)

^b UNIVERSITY OF LEIPZIG   (Germany)

^c LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^d State University of New York   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT PROPERTY; DEVICE CHARACTERISTICS; HYDROTHERMALLY; IONIZED DONORS; PHOTOLUMINESCENCE EMISSION; RECTIFICATION RATIO; SCHOTTKY CONTACTS; SERIES RESISTANCES; SHALLOW DONORS; ZNO;

ELECTRIC RESISTANCE; LITHIUM; ZINC OXIDE;

ACTIVATION ENERGY;

EID: 84865136467     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4739515     Document Type: Article

References (21)

1. V. Avrutin, G. Cantwell, J. Zhang, J. J. Song, D. J. Silversmith, and H. Morkoç, Proc. IEEE 98, 1339 (2010). 10.1109/JPROC.2010.2040363
2. K. Maeda, M. Sato, I. Niikura, and T. Fukuda, Semicond. Sci. Technol. 20, S49 (2005). 10.1088/0268-1242/20/4/006
3. E. Ohshima, H. Ogino, I. Niikura, K. Maeda, M. Sato, M. Ito, and T. Fukuda, J. Cryst. Growth 260, 166 (2004). 10.1016/j.jcrysgro.2003.08.019
4. A. Laufer, N. Volbers, S. Eisermann, K. Potzger, S. Geburt, C. Ronning, and B. K. Meyer, J. Appl. Phys. 110, 094906 (2011). 10.1063/1.3660417
5. L. Vines, E. V. Monakhov, R. Schifano, W. Mtangi, F. D. Auret, and B. G. Svensson, J. Appl. Phys. 107, 103707 (2010). 10.1063/1.3415551
6. B. K. Meyer, H. Alves, D. M. Hofmann, W. Kriegseis, D. Forster, F. Bertram, J. Christen, A. Hoffmann, M. Strassburg, M. Dworzak, U. Haboeck, and A. V. Rodina, Phys. Status Solidi B 241, 231 (2004). 10.1002/pssb.200301962
7. C. Klingshirn, Phys. Status Solidi B 244, 3027 (2007). 10.1002/pssb.200743072
8. R. J. Mendelsberg, M. W. Allen, S. M. Durbin, and R. J. Reeves, Phys. Rev. B 83, 205202 (2011). 10.1103/PhysRevB.83.205202
9. D. Reynolds, D. Look, B. Jogai, and T. Collins, Appl. Phys. Lett. 79, 3794 (2001). 10.1063/1.1412435
10. M. W. Allen, R. J. Mendelsberg, R. J. Reeves, and S. M. Durbin, Appl. Phys. Lett. 94, 103508 (2009). 10.1063/1.3089871
11. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981), pp. 363-373.
12. S. K. Cheung and N. W. Cheung, Appl. Phys. Lett. 49, 85 (1986). 10.1063/1.97359
13. M. W. Allen, P. Miller, R. J. Reeves, and S. M. Durbin, Appl. Phys. Lett. 90, 062104 (2007). 10.1063/1.2450642
14. J. Pautrat, B. Katircioglu, N. Magnea, D. Bensahel, J. Pfister, and L. Revoil, Solid-State Electron. 23, 1159 (1980). 10.1016/0038-1101(80)90028-3
15. H. von Wenckstern, H. Schmidt, M. Grundmann, M. W. Allen, P. Miller, R. J. Reeves, and S. M. Durbin, Appl. Phys. Lett. 91, 022913 (2007). 10.1063/1.2757097
16. E. V. Lavrov, F. Herklotz, and J. Weber, Phys. Rev. B. 79, 165210 (2009). 10.1103/PhysRevB.79.165210
17. F. D. Auret, W. E. Meyer, P. J. J. van Rensburg, M. Hayes, J. M. Nel, H. von Wenckstern, H. Hochmuth, G. Biehne, M. Lorenz, and M. Grundmann, J. Phys.: Conf. Ser. 100, 042038 (2008). 10.1088/1742-6596/100/4/042038
18. R. Schifano, E. Monakhov, B. Svensson, W. Mtangi, P. J. van Rensburg, and F. Auret, Physica B 404, 4344 (2009). 10.1016/j.physb.2009.09.030
19. L. Dobaczewski, A. R. Peaker, and K. B. Nielsen, J. Appl. Phys. 96, 4689 (2004). 10.1063/1.1794897
20. L. Scheffler, V. I. Kolkovsky, E. V. Lavrov, and J. Weber, J. Phys.: Condens. Matter 23, 334208 (2011). 10.1088/0953-8984/23/33/334208
21. M. Schmidt, M. Ellguth, C. Czekalla, H. V. Wenckstern, R. Pickenhain, M. Grundmann, G. Brauer, W. Skorupa, M. Helm, Q. Gu, and C. C. Ling, J. Vac. Sci. Technol. B 27, 1597 (2009). 10.1116/1.3086659