Modeling of threshold voltage and drain current of uniaxial strained p-mosfets

Journal of Nano- and Electronic Physics

Volumn 3, Issue 4, 2011, Pages 027-031

  Chaudhry, Amit ^a   Sangwan, Sonu ^a   Roy, Jatindra Nath ^b  

^a PANJAB UNIVERSITY   (India)

^b Solar Semiconductor Private Limited   (India)

Author keywords

Mobility Strained si; Model; Numerical

Indexed keywords

EID: 84865135879     PISSN: 20776772     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (7)

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