Partially sandwiched graphene as transparent conductive layer for InGaN-based vertical light emitting diodes

Applied Physics Letters

Volumn 101, Issue 6, 2012, Pages

  Wang, Liancheng ^a   Zhang, Yiyun ^a   Li, Xiao ^b   Liu, Zhiqiang ^a   Guo, Enqing ^a   Yi, Xiaoyan ^a   Wang, Junxi ^a   Zhu, Hongwei ^b   Wang, Guohong ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH-TEMPERATURE ANNEALING; METAL ATOMS; OPTICAL OUTPUT; PERFORMANCE IMPROVEMENTS; TRANSPARENT CONDUCTIVE LAYER; TRANSPARENT ELECTRODE; VERTICAL LIGHT-EMITTING DIODES; VERTICAL STRUCTURES;

GALLIUM COMPOUNDS; GRAPHENE;

LIGHT EMITTING DIODES;

EID: 84865116879     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4742892     Document Type: Article

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