Fabrication and theoretical analysis of GaN-based vertical light-emitting diodes with SiO2 current blocking layer

Semiconductor Science and Technology

Volumn 26, Issue 9, 2011, Pages

  Bae, Seong Ju ^a   Choi, Jehyuk ^a   Kim, Dong Hyun ^a   Ju, In Chan ^a   Shin, Chan Soo ^a   Ko, Chul Gi ^a   Yu, Jae Su ^b  

^a Korea Advanced Nano Fab Center (KANC)   (South Korea)

^b Kyung Hee University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT BLOCKING LAYERS; CURRENT CROWDING; FABRICATED DEVICE; INJECTION CURRENTS; LIGHT-CURRENT-VOLTAGE CHARACTERISTICS; LIGHT-EXTRACTION EFFICIENCY; MEASURED RESULTS; OPERATING VOLTAGE; OPTICAL AND THERMAL PROPERTIES; OPTICAL OUTPUT POWER; VERTICAL LIGHT-EMITTING DIODES; WAFER LEVEL;

ELECTRIC PROPERTIES; EXTRACTION; FABRICATION; GALLIUM NITRIDE; LIGHT EMISSION; ORGANIC LIGHT EMITTING DIODES (OLED); SILICON COMPOUNDS; THERMODYNAMIC PROPERTIES;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 80051985090     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/26/9/095008     Document Type: Article

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