Electron beam induced current in InSb-InAs nanowire type-III heterostructures

Applied Physics Letters

Volumn 101, Issue 6, 2012, Pages

  Chen, C Y ^a   Shik, A ^a   Pitanti, A ^b,c   Tredicucci, A ^b   Ercolani, D ^b   Sorba, L ^b   Beltram, F ^b   Ruda, H E ^a  

^a UNIVERSITY OF TORONTO   (Canada)

^b CNR   (Italy)

^c CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACCUMULATION LAYERS; BAND DIAGRAMS; DIFFUSION LENGTH; ELECTRON-BEAM-INDUCED CURRENT; HETERO INTERFACES; HETEROSTRUCTURE DIODES; INAS; SIGNAL CHANGES; SPATIAL PROFILES; TEMPERATURE DEPENDENCE; THEORETICAL CALCULATIONS;

HETEROJUNCTIONS; INDIUM ANTIMONIDES; INDIUM ARSENIDE; NANOWIRES;

ELECTRIC CURRENTS;

EID: 84865107202     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4745603     Document Type: Article

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