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Volumn 168, Issue 1, 1998, Pages 195-208
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Electronic properties of semimetallic heterojunctions
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Author keywords
[No Author keywords available]
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Indexed keywords
CALCULATIONS;
CAPACITANCE;
CURRENT VOLTAGE CHARACTERISTICS;
ELECTRIC CONDUCTIVITY;
ELECTRONIC PROPERTIES;
INTERFACES (MATERIALS);
MATHEMATICAL MODELS;
SEMICONDUCTING GALLIUM COMPOUNDS;
SEMICONDUCTING INDIUM COMPOUNDS;
CAPACITANCE VOLTAGE CHARACTERISTICS;
METALLIC CONDUCTIVITY;
METALLIC HETEROJUNCTION;
PHENOMENOLOGICAL THEORY;
SELF CONSISTENT METHOD;
SEMICONDUCTING GALLIUM ANTIMONIDE;
SEMICONDUCTING INDIUM ARSENIDE;
HETEROJUNCTIONS;
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EID: 0032115859
PISSN: 00318965
EISSN: None
Source Type: Journal
DOI: 10.1002/(SICI)1521-396X(199807)168:1<195::AID-PSSA195>3.0.CO;2-9 Document Type: Article |
Times cited : (9)
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References (16)
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