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Materials Letters

Volumn 85, Issue , 2012, Pages 171-174

Nitrogen-doped ZnO nanorods prepared by hydrothermal diffusion

(6) Wang, Lingling a Lin, Baozhu a Zhou, Lin a Shang, Yan Xia a Panin, Gannidy N b,c Fu, Dejun a

a WUHAN UNIVERSITY (China)

b Dongguk University (South Korea)

c INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS (Russian Federation)

Author keywords

Crystal growth; Crystal structure; Defects; Diffusion; Luminescence

Indexed keywords

ACCEPTOR-BOUND EXCITONS; DEVICE FABRICATIONS; DONOR-ACCEPTOR PAIRS; HYDROTHERMAL PROCESS; LOW TEMPERATURE PHOTOLUMINESCENCE; NITROGEN-DOPED; P-TYPE; P-TYPE DOPING; WIDE BAND-GAP MATERIAL; ZNO; ZNO NANOROD;

CRYSTAL GROWTH; CRYSTAL STRUCTURE; DEFECTS; DIFFUSION; LUMINESCENCE; NANORODS; NITROGEN; OPTICAL PROPERTIES; ZINC OXIDE;

DOPING (ADDITIVES);

EID: 84865104466 PISSN: 0167577X EISSN: None Source Type: Journal
DOI: 10.1016/j.matlet.2012.06.104 Document Type: Article

Times cited : (15)

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