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Volumn 42, Issue 12, 2009, Pages
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Effect of annealing temperature on the conduction mechanism for a sol-gel driven ZnO Schottky diode
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Author keywords
[No Author keywords available]
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Indexed keywords
ABSORPTION PEAKS;
ANNEALING TEMPERATURES;
CHELATING AGENT;
CONDUCTION MECHANISM;
CONDUCTION MODELS;
CONDUCTION PROCESS;
DEEP TRAPS;
FIELD EMISSION SCANNING ELECTRON MICROSCOPY;
FORWARD CURRENTS;
FOURIER TRANSFORM INFRARED;
FTIR ABSORPTION;
HEATING PROCESS;
HEATING TEMPERATURES;
LINEAR RELATIONSHIPS;
METAL-SEMICONDUCTOR-METAL STRUCTURES;
NH GROUPS;
POOLE-FRENKEL CONDUCTION;
SCHOTTKY;
SCHOTTKY DIODES;
SOL-GEL METHODS;
SPACE CHARGE LIMITED CONDUCTION;
THEORETICAL VALUES;
ULTRAVIOLET VISIBLE ABSORPTION;
ZNO;
ZNO FILMS;
ABSORPTION;
AMINES;
ANNEALING;
CHELATION;
DIODES;
ETHANOL;
FIELD EMISSION;
FIELD EMISSION MICROSCOPES;
FOURIER TRANSFORM INFRARED SPECTROSCOPY;
GELATION;
GELS;
HEATING;
METALLIC FILMS;
ORGANIC SOLVENTS;
PHOTODETECTORS;
SCANNING ELECTRON MICROSCOPY;
SCHOTTKY BARRIER DIODES;
SEMICONDUCTING ZINC COMPOUNDS;
SEMICONDUCTOR DIODES;
SOL-GEL PROCESS;
SOL-GELS;
SOLS;
STRUCTURAL METALS;
THERMAL EFFECTS;
ZINC;
ZINC OXIDE;
METAL ANALYSIS;
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EID: 70249097386
PISSN: 00223727
EISSN: 13616463
Source Type: Journal
DOI: 10.1088/0022-3727/42/12/125110 Document Type: Article |
Times cited : (21)
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References (13)
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