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Volumn 42, Issue 12, 2009, Pages

Effect of annealing temperature on the conduction mechanism for a sol-gel driven ZnO Schottky diode

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION PEAKS; ANNEALING TEMPERATURES; CHELATING AGENT; CONDUCTION MECHANISM; CONDUCTION MODELS; CONDUCTION PROCESS; DEEP TRAPS; FIELD EMISSION SCANNING ELECTRON MICROSCOPY; FORWARD CURRENTS; FOURIER TRANSFORM INFRARED; FTIR ABSORPTION; HEATING PROCESS; HEATING TEMPERATURES; LINEAR RELATIONSHIPS; METAL-SEMICONDUCTOR-METAL STRUCTURES; NH GROUPS; POOLE-FRENKEL CONDUCTION; SCHOTTKY; SCHOTTKY DIODES; SOL-GEL METHODS; SPACE CHARGE LIMITED CONDUCTION; THEORETICAL VALUES; ULTRAVIOLET VISIBLE ABSORPTION; ZNO; ZNO FILMS;

EID: 70249097386     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/12/125110     Document Type: Article
Times cited : (21)

References (13)
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.