Pyrolytic transformation from polydihydrosilane to hydrogenated amorphous silicon film

Thin Solid Films

Volumn 520, Issue 21, 2012, Pages 6603-6607

  Masuda, Takashi ^a   Matsuki, Yasuo ^a,c   Shimoda, Tatsuya ^a,b  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^b JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^c JSR CORPORATION   (Japan)

Author keywords

Amorphous silicon; Cyclopentasilane; Polydihydrosilane; Polysilane; Solution process

Indexed keywords

A-SI:H; COATED SUBSTRATES; CYCLOPENTASILANE; FABRICATION OF THIN FILMS; HYDROGEN CONTENTS; HYDROGENATED AMORPHOUS SILICON (A-SI:H); HYDROGENATED AMORPHOUS SILICON FILMS; OPTICAL GAP; PHONON BANDS; POLYDIHYDROSILANE; PYROLYSIS TEMPERATURE; SI-SI BONDS; SOLUTION PROCESS; SPIN DENSITIES; THERMAL GRAVIMETRY; VACUUM PROCESS;

AMORPHOUS SILICON; DIFFERENTIAL THERMAL ANALYSIS; HYDROGENATION; POLYSILANES; PYROLYSIS; SILICON; VACUUM;

FILM PREPARATION;

EID: 84864776910     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2012.07.028     Document Type: Article

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